Ultrahigh-Sensitivity and Fast-Speed Ultraviolet Pulsed Photodetectors Based on the Transverse Thermoelectric Effect of Inclined PbBi2Te4 Thin Films

IF 6.7 1区物理与天体物理 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Photonics Pub Date : 2024-11-28 DOI:10.1021/acsphotonics.4c01602

Mingjing Chen, Chenming Yue, Haixu Liu, Xin Qian, Lide Fang, Shufang Wang

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Abstract

The transverse thermoelectric (TTE) effect of inclined thin films, originating from the anisotropy of the Seebeck coefficient of the films, has received extensive attention owing to its great application potential in self-powered photodetectors and heat flux sensors. In this paper, a novel TTE ultraviolet pulsed photodetector was constructed by using a high-quality c-axis inclined PbBi₂Te₄ thin film prepared on an SrTiO₃ substrate via a pulsed laser deposition technique. The device exhibited very high voltage sensitivity R_s as well as ultrafast response time, with an R_s of about 25.75 V/mJ and rise time of about 18 ns. In addition, the device showed long-term working stability in air after coating a thin layer of Al₂O₃ and perfect linearity with an R-squared coefficient close to 1. The results demonstrate that PbBi₂Te₄, a compound with large anisotropy of the Seebeck coefficient, is a new promising material for fabricating high-performance TTE-based ultraviolet pulsed photodetectors.

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基于倾斜PbBi2Te4薄膜横向热电效应的超高灵敏度高速紫外脉冲光电探测器

斜薄膜的横向热电效应是由薄膜塞贝克系数的各向异性引起的，在自供电光电探测器和热流传感器中具有很大的应用潜力，受到了广泛的关注。本文利用脉冲激光沉积技术在SrTiO3衬底上制备高质量的c轴倾斜PbBi2Te4薄膜，构建了一种新型TTE紫外脉冲光电探测器。该器件具有非常高的电压灵敏度Rs和超快的响应时间，Rs约为25.75 V/mJ，上升时间约为18 ns。此外，该器件在覆盖一层薄薄的Al2O3后，在空气中表现出长期的工作稳定性，并且具有良好的线性，r平方系数接近1。结果表明，具有大塞贝克系数各向异性的PbBi2Te4是一种很有前途的新型材料，可用于制作高性能的基于tet的紫外脉冲光电探测器。

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来源期刊

ACS Photonics NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.90

自引率

5.70%

发文量

438

审稿时长

2.3 months

期刊介绍： Published as soon as accepted and summarized in monthly issues, ACS Photonics will publish Research Articles, Letters, Perspectives, and Reviews, to encompass the full scope of published research in this field.