Hydrogen behavior and microstructural evolution in flexible IGZO thin films under stress

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-03-01 Epub Date: 2024-11-29 DOI:10.1016/j.mssp.2024.109151

Bin Liu , Zhen Shen , Xuyang Li , Dan Kuang , Xianwen Liu , Shuo Zhang , Congyang Wen , Xiaorui Zi , Xi Zhang , Haoran Sun , Guangcai Yuan , Jian Guo , Ce Ning , Dawei Shi , Anyuan Qiu , Feng Wang , Zhinong Yu

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Abstract

In this study, we investigated the effect of mechanical stress on hydrogen diffusion in flexible amorphous InGaZnO (a-IGZO) thin films and the resulting microstructural changes. The cyclic bending test under different curvature radii (R) revealed significant morphological evolution and bond state changes in IGZO thin films. As the curvature radius decreases from 20 mm to 5 mm, the surface of the sample gradually becomes rough and cracks appear. Simultaneously, changes in nanoscale topological structure and chemical composition exhibit stronger hydrogen diffusion and structural relaxation: The oxygen-hydrogen (O-H) bond content increased from 19 % to 55 %, while the metal-oxygen (M − O) bond content decreased from 50 % to 28 %. The M − H content increased, and In-H related structures underwent transformation. The radius of gyration (R_g) increasing from 1.652 nm to 1.812 nm. These results provide quantitative insights into the stability and performance of IGZO-based flexible electronic devices under mechanical deformation.

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应力作用下柔性IGZO薄膜中的氢行为和微观结构演变

在本研究中，我们研究了机械应力对氢在柔性非晶InGaZnO （a-IGZO）薄膜中扩散的影响以及由此产生的微观结构变化。不同曲率半径(R)下的循环弯曲试验表明，IGZO薄膜的形态演变和键态变化显著。随着曲率半径从20 mm减小到5 mm，试样表面逐渐变得粗糙，出现裂纹。同时，纳米级拓扑结构和化学成分的变化表现出更强的氢扩散和结构弛豫：氧-氢（O- h）键的含量从19%增加到55%，而金属-氧（M−O）键的含量从50%下降到28%。M−H含量增加，In-H相关结构发生转变。旋转半径（Rg）由1.652 nm增加到1.812 nm。这些结果为基于igzo的柔性电子器件在机械变形下的稳定性和性能提供了定量的见解。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.