High capacity CO₂ capture by α-BeH₂ nanosheet through charge modulation: A first-principles study

IF 4.6 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-03-01 Epub Date: 2024-11-28 DOI:10.1016/j.mssp.2024.109175
Ali Naderizadeh , Hamideh Kahnouji , Rezvan Rahimi , Mohammad Solimannejad
{"title":"High capacity CO₂ capture by α-BeH₂ nanosheet through charge modulation: A first-principles study","authors":"Ali Naderizadeh ,&nbsp;Hamideh Kahnouji ,&nbsp;Rezvan Rahimi ,&nbsp;Mohammad Solimannejad","doi":"10.1016/j.mssp.2024.109175","DOIUrl":null,"url":null,"abstract":"<div><div>The increasing concern regarding elevated atmospheric CO₂ levels and their environmental impact is driving the development of advanced materials and technologies for efficient CO₂ capture and conversion. In this study, we focus on investigating the adsorption of CO₂ on beryllium hydride (α-BeH₂) nanosheets through charge modulation, using density functional theory calculations. There is minimal difference in adsorption energy between the 1e⁻ negatively charged surface and the neutral surface. Our findings indicate that the adsorption energy of CO₂ can be significantly enhanced by introducing three positively charged states. These results demonstrate that the +3e positively charged α-BeH₂ surface is an excellent sorbent for CO₂ capture, with an adsorption energy of −0.85 eV/CO₂. This indicates a transition from physisorption to chemisorption on these positively charged nanosheets. Focusing on the adsorption behavior, we discovered that introducing three positive charges into the α-BeH₂ nanosheet enables the uptake of eighteen CO₂ molecules. This achieves a CO₂ capture capacity of 74.18 wt% and an adsorption energy of −0.51eV/CO₂. These values are significantly higher than those observed with many other 2D substrates. Molecular dynamics (MD) simulations confirmed the thermal stability of the 18CO₂/BeH₂ complex at 300 K. Overall, our findings highlight α-BeH₂ monolayers with 3e positive charges as a promising substrate for highly efficient CO₂ capture.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109175"},"PeriodicalIF":4.6000,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010710","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/11/28 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

The increasing concern regarding elevated atmospheric CO₂ levels and their environmental impact is driving the development of advanced materials and technologies for efficient CO₂ capture and conversion. In this study, we focus on investigating the adsorption of CO₂ on beryllium hydride (α-BeH₂) nanosheets through charge modulation, using density functional theory calculations. There is minimal difference in adsorption energy between the 1e⁻ negatively charged surface and the neutral surface. Our findings indicate that the adsorption energy of CO₂ can be significantly enhanced by introducing three positively charged states. These results demonstrate that the +3e positively charged α-BeH₂ surface is an excellent sorbent for CO₂ capture, with an adsorption energy of −0.85 eV/CO₂. This indicates a transition from physisorption to chemisorption on these positively charged nanosheets. Focusing on the adsorption behavior, we discovered that introducing three positive charges into the α-BeH₂ nanosheet enables the uptake of eighteen CO₂ molecules. This achieves a CO₂ capture capacity of 74.18 wt% and an adsorption energy of −0.51eV/CO₂. These values are significantly higher than those observed with many other 2D substrates. Molecular dynamics (MD) simulations confirmed the thermal stability of the 18CO₂/BeH₂ complex at 300 K. Overall, our findings highlight α-BeH₂ monolayers with 3e positive charges as a promising substrate for highly efficient CO₂ capture.
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α-BeH₂纳米片通过电荷调制捕获高容量CO₂:第一性原理研究
对大气CO 2水平升高及其对环境的影响的日益关注正在推动先进材料和技术的发展,以实现有效的CO 2捕获和转化。在本研究中,我们重点研究了CO₂通过电荷调制在氢化铍(α-BeH₂)纳米片上的吸附,利用密度泛函理论计算。在带负电的表面和中性表面之间的吸附能差别很小。我们的研究结果表明,引入三个正电荷态可以显著提高CO₂的吸附能。结果表明,带+3e正电荷的α-BeH₂表面吸附能为- 0.85 eV/CO₂,是吸附CO₂的优良吸附剂。这表明这些带正电的纳米片从物理吸附转变为化学吸附。通过对吸附行为的研究,我们发现在α-BeH₂纳米片上引入3个正电荷可以吸附18个CO₂分子。这实现了74.18 wt%的CO₂捕获能力和- 0.51eV/CO₂的吸附能。这些值明显高于许多其他2D衬底所观察到的值。分子动力学(MD)模拟证实了18CO₂/BeH₂配合物在300 K时的热稳定性。总的来说,我们的研究结果突出了具有3e正电荷的α-BeH₂单层作为高效捕获CO₂的有前途的底物。
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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