Effect of growth temperature on crystalline quality of epitaxial MnSnO3 thin films

IF 4.6 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2025-03-01 Epub Date: 2024-11-29 DOI:10.1016/j.mssp.2024.109170

Hongyan Zhu, Biao Zhang, Yuankang Wang, Caina Luan, Jin Ma, Hongdi Xiao

{"title":"Effect of growth temperature on crystalline quality of epitaxial MnSnO3 thin films","authors":"Hongyan Zhu, Biao Zhang, Yuankang Wang, Caina Luan, Jin Ma, Hongdi Xiao","doi":"10.1016/j.mssp.2024.109170","DOIUrl":null,"url":null,"abstract":"<div><div>Epitaxial single-crystal MnSnO3 thin films were deposited on single-crystal Al2O3 substrates using pulsed laser deposition (PLD) technology, and an analysis was conducted on the impact of the growth temperature on the crystalline quality of the films. The test results show that the growth of MnSnO3 thin films at 900 °C results in sharp diffraction peaks with high intensity in the c-axis direction, better crystalline quality (FWHM of XRD 2θ peak: 0.24°), less roughness (RSM: 0.67 nm) and wider optical band gap (Eg = 2.91 eV) compared with the grown samples at other temperatures. The MnSnO3 thin film deposited at 900 °C exhibits strong photoluminescence at 341.1 and 423.1 nm, as well as high ferroelectric polarization of ∼40 μC/cm2. The fabrication of epitaxial MnSnO3 thin films opens up a new avenue for further research into their ferroelectric photovoltaic properties.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109170"},"PeriodicalIF":4.6000,"publicationDate":"2025-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010667","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2024/11/29 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

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Abstract

Epitaxial single-crystal MnSnO₃ thin films were deposited on single-crystal Al₂O₃ substrates using pulsed laser deposition (PLD) technology, and an analysis was conducted on the impact of the growth temperature on the crystalline quality of the films. The test results show that the growth of MnSnO₃ thin films at 900 °C results in sharp diffraction peaks with high intensity in the c-axis direction, better crystalline quality (FWHM of XRD 2θ peak: 0.24°), less roughness (RSM: 0.67 nm) and wider optical band gap (E_g = 2.91 eV) compared with the grown samples at other temperatures. The MnSnO₃ thin film deposited at 900 °C exhibits strong photoluminescence at 341.1 and 423.1 nm, as well as high ferroelectric polarization of ∼40 μC/cm². The fabrication of epitaxial MnSnO₃ thin films opens up a new avenue for further research into their ferroelectric photovoltaic properties.

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生长温度对外延二氧化锰薄膜结晶质量的影响

采用脉冲激光沉积（PLD）技术在单晶Al2O3衬底上沉积了外延单晶MnSnO3薄膜，并分析了生长温度对薄膜结晶质量的影响。测试结果表明：与其他温度下生长的样品相比，在900℃下生长的MnSnO3薄膜在C轴方向出现了高强度的尖锐衍射峰，晶体质量更好（XRD 2θ峰FWHM: 0.24°），粗糙度更小（RSM: 0.67 nm），光学带隙更宽（Eg = 2.91 eV）。在900℃下沉积的mnnsno3薄膜在341.1 nm和423.1 nm处表现出较强的光致发光，铁电极化强度达到~ 40 μC/cm2。外延二氧化锰薄膜的制备为进一步研究其铁电光伏特性开辟了新的途径。

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.