Effect of growth temperature on crystalline quality of epitaxial MnSnO3 thin films

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Materials Science in Semiconductor Processing Pub Date : 2024-11-29 DOI:10.1016/j.mssp.2024.109170

Hongyan Zhu, Biao Zhang, Yuankang Wang, Caina Luan, Jin Ma, Hongdi Xiao

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Abstract

Epitaxial single-crystal MnSnO₃ thin films were deposited on single-crystal Al₂O₃ substrates using pulsed laser deposition (PLD) technology, and an analysis was conducted on the impact of the growth temperature on the crystalline quality of the films. The test results show that the growth of MnSnO₃ thin films at 900 °C results in sharp diffraction peaks with high intensity in the c-axis direction, better crystalline quality (FWHM of XRD 2θ peak: 0.24°), less roughness (RSM: 0.67 nm) and wider optical band gap (E_g = 2.91 eV) compared with the grown samples at other temperatures. The MnSnO₃ thin film deposited at 900 °C exhibits strong photoluminescence at 341.1 and 423.1 nm, as well as high ferroelectric polarization of ∼40 μC/cm². The fabrication of epitaxial MnSnO₃ thin films opens up a new avenue for further research into their ferroelectric photovoltaic properties.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.