{"title":"Synergistic impact of Al2O3 capping layer and deposition temperature for enhancing the ferroelectricity of undoped-HfO2 thin films","authors":"Sang Han Ko , Seung-Eon Moon , Sung Min Yoon","doi":"10.1016/j.cap.2024.11.016","DOIUrl":null,"url":null,"abstract":"<div><div>Synergistic effects of Al<sub>2</sub>O<sub>3</sub> capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO<sub>2</sub> thin films were investigated. The use of an Al<sub>2</sub>O<sub>3</sub> capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO<sub>2</sub> thin films, leading to a net remnant polarization (2P<sub>r</sub>) of >20 μC/cm<sup>2</sup> when deposited <260 °C. The HfO<sub>2</sub> thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10<sup>−6</sup> A/cm<sup>2</sup> at an electric field of 2 MV/cm, accompanied by a high 2P<sub>r</sub> and an endurance of >10<sup>7</sup> cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO<sub>2</sub> thin films by means of the Al<sub>2</sub>O<sub>3</sub> capping process.</div></div>","PeriodicalId":11037,"journal":{"name":"Current Applied Physics","volume":"71 ","pages":"Pages 1-8"},"PeriodicalIF":2.4000,"publicationDate":"2024-11-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Current Applied Physics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1567173924002736","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Synergistic effects of Al2O3 capping layer and deposition temperature, ranging from 220 to 280 °C, on the ferroelectric properties of undoped HfO2 thin films were investigated. The use of an Al2O3 capping layer during atomic layer deposition (ALD) process was verified to induce a ferroelectric orthorhombic phase in undoped HfO2 thin films, leading to a net remnant polarization (2Pr) of >20 μC/cm2 when deposited <260 °C. The HfO2 thin film deposited at 240 °C showed a low leakage current density of 5.7 × 10−6 A/cm2 at an electric field of 2 MV/cm, accompanied by a high 2Pr and an endurance of >107 cycles. Furthermore, the switching time for ferroelectric polarization reversal was estimated to range from 2.1 to 1.7 μs in the voltage range of 3.5–4.5 V. The results of this work demonstrated the impact of deposition temperature conditions on the ferroelectric properties of the HfO2 thin films by means of the Al2O3 capping process.
期刊介绍:
Current Applied Physics (Curr. Appl. Phys.) is a monthly published international journal covering all the fields of applied science investigating the physics of the advanced materials for future applications.
Other areas covered: Experimental and theoretical aspects of advanced materials and devices dealing with synthesis or structural chemistry, physical and electronic properties, photonics, engineering applications, and uniquely pertinent measurement or analytical techniques.
Current Applied Physics, published since 2001, covers physics, chemistry and materials science, including bio-materials, with their engineering aspects. It is a truly interdisciplinary journal opening a forum for scientists of all related fields, a unique point of the journal discriminating it from other worldwide and/or Pacific Rim applied physics journals.
Regular research papers, letters and review articles with contents meeting the scope of the journal will be considered for publication after peer review.
The Journal is owned by the Korean Physical Society.