Extreme ultraviolet lithography

Abstract

Extreme ultraviolet lithography (EUVL) was recently adopted by the semiconductor industry as the leading-edge lithography technique for continued miniaturization of semiconductor devices in line with Moore’s law. EUVL has emerged as a critical technique, taking advantage of shorter wavelengths to achieve nanoscale feature sizes with higher precision and lower defect rates than previous lithography methods. This Primer comprehensively explores the technical evolution from deep ultraviolet to extreme ultraviolet (EUV) lithography, highlighting innovative approaches in source technology, resist materials and optical systems developed to meet the stringent requirements of high-volume manufacturing. Beginning with an overview of the fundamental principles of photolithography, the main components and functionalities of EUV scanners are described. It also covers exposure tools that support research and early development phases. Key topics — such as image formation, photoresist platforms and pattern transfer — are explained with an emphasis on improving resolution and throughput. Additionally, persistent challenges are addressed, such as stochastic effects and resist sensitivity, with insights provided into future directions for EUVL, including high-numerical aperture systems and novel resist platforms. This Primer aims to present a detailed review of current EUVL capabilities and project the future developments and evolution of EUVL in semiconductor manufacturing. Extreme ultraviolet (EUV) lithography is used to fabricate features with nanometre-scale resolution. This Primer explores how EUV lithography can be applied to manufacture semiconductor devices, explaining lithographic tools, photoresists and potential future developments.