A Magnetic-Free RF Circulator Based on Spatiotemporal Modulated LN/SiO2/Sapphire Surface Acoustic Wave Delay Lines

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-10-10 DOI:10.1109/LED.2024.3477505
Ya-Ching Yu;Chia-Hsien Tsai;Zhi-Qiang Lee;Chin-Yu Chang;Cheng-Chien Lin;Yi-Cheng Liao;Tzu-Hsuan Hsu;Ming-Huang Li
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Abstract

In this study, we explore the design and implementation of a magnetic-free radio frequency (RF) circulator using spatiotemporal modulated thin film surface acoustic wave delay lines. The four-port circulator is designed based on two tightly packed low-propagation loss acoustic delay lines (ADLs) on a single LN/SiO2/sapphire (LNOS) chip with sequentially-switched delay line (SSDL) topology, complemented by two external switch modules composed of commercially available RF switches. The ADLs are characterized by a low insertion loss (IL) of 5.54 dB, a wide 3-dB bandwidth of 5.45%, and a large group delay of 110 ns at 880 MHz, operating in shear horizontal (SH) mode. The implemented circulator achieves a nonreciprocal contrast of 18.2 dB and 20.8 dB between IL of 10.8 dB and isolation of 29 dB (port 3 to port 1) and 31.6 dB (port 4 to port 1) over an isolation bandwidth of 6% (53.6 MHz), with a low modulation frequency of 2.27 MHz.
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基于时空调制LN/SiO2/蓝宝石表面声波延迟线的无磁射频环行器
在这项研究中,我们探索了使用时空调制薄膜表面声波延迟线设计和实现无磁射频(RF)环行器。该四端口环行器设计基于两个紧密封装的低传播损耗声学延迟线(adl),该延迟线位于单个LN/SiO2/蓝宝石(LNOS)芯片上,具有顺序切换延迟线(SSDL)拓扑,并辅以两个由市售射频开关组成的外部开关模块。adl具有5.54 dB的低插入损耗(IL)、5.45%的宽3db带宽和880 MHz时110 ns的大群延迟,工作在剪切水平(SH)模式。所实现的环行器在隔离带宽为6% (53.6 MHz),调制频率为2.27 MHz的情况下,在IL为10.8 dB,隔离度为29 dB(端口3到端口1)和31.6 dB(端口4到端口1)之间实现了18.2 dB和20.8 dB的非倒数对比度。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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Front Cover Table of Contents IEEE Transactions on Electron Devices Table of Contents IEEE Electron Device Letters Information for Authors EDS Meetings Calendar
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