Influence of Sn2+doping to improve the charge transport and light-emitting properties of CsPbCl3perovskites.

Abstract

Doping B-site with metal ions is an emerging strategy to reduce lead toxicity and enhance the optoelectronic performance of lead halide perovskites. Also, the concentration of metal dopants plays an important role in achieving the desired electrical and optical properties of these halide perovskites. This work presents a simple chemical approach to synthesize pure and Sn²⁺doped CsPbCl₃perovskites at room temperature. The dopant concentration was varied from 1 to 9 mol%. The structural, morphological, optical, thermal, and electrical properties of prepared perovskites are studied in order to check the optimal doping concentration along with to know the improvement in the optoelectronic properties required for LEDs and photovoltaic cells. It was observed that CsPbCl₃perovskites exhibit high photoluminescence intensity, blue/violet emission, and high charge carrier mobility (up to 56.3 cm²V s^-1) with a reduction in bandgap (up to 2.865 eV) after Sn²⁺doping.