Quantum transport properties of a double-barrier quantum well structure based on V-cut edge-patterned armchair graphene nanoribbon

IF 2.2 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-12-02 DOI:10.1007/s10825-024-02264-4

Bikramjit Basumatary, Agile Mathew

引用次数: 0

Abstract

A double-barrier quantum well is created using a larger band gap V-cut modified armchair graphene nanoribbon (AGNR) for the barrier region and a pristine AGNR with a smaller bandgap for the channel region. The numerical non-equilibrium Green’s function (NEGF) method, based on the pi-orbital tight-binding model, is employed to study the quantum transport properties of the device. The effects of various dimensional parameters, such as contact width, channel length, and distance between V-cuts in the barrier region, are investigated. The plot of the local density of states (LDOS) shows the formation of a single quantized quasi-energy state in the channel region, corresponding to a peak in transmission. The V–I characteristics of the device exhibit negative differential resistance (NDR) regions for a certain range of bias values. This device’s resonant tunneling performance parameters are compared with those of a similar, previously reported structure.

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基于v形边型扶手椅石墨烯纳米带的双势垒量子阱结构的量子输运性质

双势垒量子阱使用较大带隙的V-cut修饰扶手型石墨烯纳米带（AGNR）作为势垒区，通道区域使用较小带隙的原始AGNR。采用基于pi轨道紧密结合模型的数值非平衡格林函数（NEGF）方法研究了该器件的量子输运性质。研究了各种尺寸参数，如接触宽度、通道长度和势垒区v形切口之间的距离等。局域态密度（LDOS）图显示在通道区域形成了一个单一的量子化准能态，对应于传输中的峰值。该器件的V-I特性在一定偏置范围内呈现负差分电阻（NDR）区域。将该装置的谐振隧道性能参数与先前报道的类似结构进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED

CiteScore

4.50

自引率

4.80%

发文量

142

审稿时长

>12 weeks

期刊介绍： he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.