Spectroscopic ellipsometry utilizing frequency division multiplexed lasers

Abstract

Spectroscopic ellipsometry (SE), which measures the thickness of thin films in a non-contact way with an accuracy of angstroms, has been widely used for optical metrology. Several types of SE are available both commercially and in research, although they require specific implementations depending on the application. Here, we theoretically and experimentally demonstrate the Frequency Division Multiplexing Spectroscopic Ellipsometry (FDM-SE) technique. With respect to conventional rotating polarizing element ellipsometry, our variant uses discrete-wavelength intensity-modulated laser diodes. This modification enables the measurement of optical properties of materials at multiple wavelengths simultaneously. We further compare the performance of the FDM-SE to a commercial instrument by measuring the thickness of SiO2 films on a Si wafer, obtaining a difference between the measured thicknesses with both methods of less than 5 Å. The proposed FDM-SE technique therefore provides a more efficient alternative to conventional SE with a high accuracy for thickness measurements. Spectroscopic ellipsometry, capable of measuring the thickness of thin films with an accuracy of angstroms, has been widely used both in research and commercially. Here, the authors theoretically and experimentally demonstrate a unique variant of spectroscopic ellipsometry utilizing frequency division multiplexed lasers of different wavelengths.