Ferroelectric memristor and its neuromorphic computing applications

Abstract

Ferroelectric memristors, characterized by spontaneous polarization ferroelectric materials as a functional layer of memristor, yields unique ferroelectric resistive switching behaviours under a reversal electric field. This device demonstrates notable capability in the stable and precise emulation of synaptic and neuronal functions, analogous to those in the human brain, offering an attractive option for neuromorphic computing. With the development of nanotechnology and nano-ferroelectric materials, the advent of nano-ferroelectric memristors enables their incorporation into dense crossbar arrays, enhancing the density and efficiency of neuromorphic computing. In this review, we offer a comprehensive overview of ferroelectric memristor and its neuromorphic computing applications, including the recent progress, existing challenges and possible solutions, as well as future development direction.