High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V

Abstract

In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition. Due to the thermal oxidation treatment, a smooth oxide interlayer between P-GaN and Al $_{\mathbf {{2}}}$ O $_{\mathbf {{3}}}$ is formed. Compared with the device without treatment, the P-GaN gate HEMTs with OTALD present increased threshold voltage significantly from 1.8 V to 7.1 V and improved gate breakdown voltage from 18.9 V to 26.9 V. Additionally, the devices maintained a high on/off current ratio above $10^{\mathbf {{8}}}$ and a further improvement in off-state breakdown voltage from 1315 V to 1980 V. The record high threshold voltage and breakdown voltage make this technology promising for widespread application in P-GaN power devices.