{"title":"High-Reliability HfO2/ZrO2 Superlattice Ferroelectric Poly-Si FinFET Memory Device Utilizing Green Laser Crystallization","authors":"Chen-You Wei;Yung-Teng Fang;Yi-Ju Yao;Chih-Chao Yang;Fu-Ju Hou;Chien-Chun Chen;Yung-Hsien Wu;Yung-Chun Wu","doi":"10.1109/LED.2024.3485900","DOIUrl":null,"url":null,"abstract":"In this study, we employ GIXRD to determine that the HfO2/ZrO2 superlattice (SL-HZO) exhibits a higher proportion of orthorhombic phase than conventional HZO. We first demonstrate low-temperature polycrystalline silicon (LTPS) formed by green laser crystallization with SL-HZO to manufacture ferroelectric FinFET (Fe-FinFET). SEM and AFM analyses confirmed the high quality of the modified polycrystalline silicon channel. The LTPS/SL-HZO Fe-FinFET demonstrated an impressive memory window (MW) of 1.93 V under ±5 V high-speed (100 ns) pulse operation. It exhibited a robust endurance of \n<inline-formula> <tex-math>$10^{{6}}$ </tex-math></inline-formula>\n cycles, with the MW remaining stable at 1.92 V over \n<inline-formula> <tex-math>$10^{{4}}$ </tex-math></inline-formula>\n s without degradation. In conclusion, the LTPS/SL-HZO Fe-FinFET shows outstanding performance and reliability, indicating significant potential for non-volatile memory applications.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2272-2275"},"PeriodicalIF":4.1000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10734310/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this study, we employ GIXRD to determine that the HfO2/ZrO2 superlattice (SL-HZO) exhibits a higher proportion of orthorhombic phase than conventional HZO. We first demonstrate low-temperature polycrystalline silicon (LTPS) formed by green laser crystallization with SL-HZO to manufacture ferroelectric FinFET (Fe-FinFET). SEM and AFM analyses confirmed the high quality of the modified polycrystalline silicon channel. The LTPS/SL-HZO Fe-FinFET demonstrated an impressive memory window (MW) of 1.93 V under ±5 V high-speed (100 ns) pulse operation. It exhibited a robust endurance of
$10^{{6}}$
cycles, with the MW remaining stable at 1.92 V over
$10^{{4}}$
s without degradation. In conclusion, the LTPS/SL-HZO Fe-FinFET shows outstanding performance and reliability, indicating significant potential for non-volatile memory applications.
期刊介绍：
IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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