Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment

Abstract

A novel plasma-enhanced supercritical phase fluid (SCF) process is proposed on a Ge FinFET CMOS inverter to resolve the insufficient oxidation in large-size chamber and unavailable nitridation effects with a SCF system. The metastable low oxidation states and interface traps in high-k and interfacial layer are clearly reduced by the supplemented oxygen and nitrogen radicals in SCF. As a result, Ge FinFET with enhanced oxidation and partially nitridation (EOPN)-SCF treatment exhibits an EOT value of 0.66 nm, drive current of 2.6 mA/ $\mu $ m (@V $_{\text {OV}}=1$ V), leakage current of 0.3 nA/ $\mu $ m, ION/IOFF of ${7}\times {10} ^{{5}}$ , S.S. value of 88 mV/dec, DIT of ${3}\times {10} ^{{11}}$ cm-2eV-1, fewer border traps, better reliability characteristics, more symmetrical VIN-VOUT and peak voltage gain of 58 V/V for CMOS inverter.