Investigation of a potential photovoltaic absorber based on first principles spectroscopic screening of chalcogenide perovskites: CaZrX3 (X = S, Se)

IF 2.2 4区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Journal of Computational Electronics Pub Date : 2024-12-03 DOI:10.1007/s10825-024-02245-7
Naincy Pandit, Rashmi Singh, Tarun Kumar Joshi, Akash Shukla, Peeyush Kumar Kamlesh, Anusha Dubey, Tanuj Kumar, Manendra S. Chauhan, Ajay Singh Verma
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Abstract

Metal chalcogenide perovskites have a number of benefits over lead-halide perovskites, including superior moisture resistance, light-induced degradation together with nontoxic elemental composition, higher absorption, and exceptional carrier transport properties. These materials have orthorhombic phase Pnma and are potential candidate materials to be used as absorber materials in solar cells. In this study, we propose metal chalcogenide perovskites CaZrX3 (X = S, Se) as a candidate absorber material. Therefore, the investigation of the structural, electrical, optical, thermal, and thermoelectric properties of CaZrX3, where X = S, Se, is being carried out using first principles methods. These proposed semiconducting compounds will meet the requirement for stability against volume change. These materials show a direct band gap of 1.812 eV and 1.117 eV at the Γ point. To better understand the optical transitions in the material, the real and imaginary parts of the dielectric function have been calculated. The remarkable absorption coefficient \((\alpha )\) exceeding 105 cm−1 above photon energy exceeding bandgap indicates that the materials are suitable for the visible light absorption. For the estimation of photovoltaic performance of CaZrX3 (X = S, Se) and to demonstrate the high photo-absorptivity, the spectroscopic-limited maximum efficiency has been calculated. The results show a maximum photovoltaic efficiency of 26.4% and 32.4% for CaZrS3 and CaZrSe3 respectively at the thickness L = 100 nm. We have also calculated the thermoelectric coefficients. These perovskites are gaining more attention as a thermoelectric material because of their higher Seebeck coefficient, and ultra-low thermal conductivity.

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基于第一性原理光谱筛选硫系钙钛矿CaZrX3 (X = S, Se)的潜在光伏吸收剂研究
与卤化铅钙钛矿相比,金属硫系钙钛矿具有许多优点,包括优越的抗湿性、光诱导降解以及无毒元素组成、更高的吸收率和特殊的载流子传输特性。这些材料具有正交相Pnma,是太阳能电池吸收材料的潜在候选材料。在本研究中,我们提出金属硫系钙钛矿CaZrX3 (X = S, Se)作为候选吸收材料。因此,使用第一性原理方法研究X = S, Se的CaZrX3的结构、电学、光学、热学和热电性质。这些半导体化合物将满足对体积变化的稳定性要求。这些材料在Γ点处的直接带隙分别为1.812 eV和1.117 eV。为了更好地理解材料中的光学跃迁,我们计算了介电函数的实部和虚部。光子能量超过带隙以上的显著吸收系数\((\alpha )\)超过105 cm−1,表明该材料适合可见光吸收。为了估计CaZrX3 (X = S, Se)的光伏性能,并证明其具有较高的光吸收率,计算了光谱限制下的最大效率。结果表明,最大光伏效率为26.4% and 32.4% for CaZrS3 and CaZrSe3 respectively at the thickness L = 100 nm. We have also calculated the thermoelectric coefficients. These perovskites are gaining more attention as a thermoelectric material because of their higher Seebeck coefficient, and ultra-low thermal conductivity.
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来源期刊
Journal of Computational Electronics
Journal of Computational Electronics ENGINEERING, ELECTRICAL & ELECTRONIC-PHYSICS, APPLIED
CiteScore
4.50
自引率
4.80%
发文量
142
审稿时长
>12 weeks
期刊介绍: he Journal of Computational Electronics brings together research on all aspects of modeling and simulation of modern electronics. This includes optical, electronic, mechanical, and quantum mechanical aspects, as well as research on the underlying mathematical algorithms and computational details. The related areas of energy conversion/storage and of molecular and biological systems, in which the thrust is on the charge transport, electronic, mechanical, and optical properties, are also covered. In particular, we encourage manuscripts dealing with device simulation; with optical and optoelectronic systems and photonics; with energy storage (e.g. batteries, fuel cells) and harvesting (e.g. photovoltaic), with simulation of circuits, VLSI layout, logic and architecture (based on, for example, CMOS devices, quantum-cellular automata, QBITs, or single-electron transistors); with electromagnetic simulations (such as microwave electronics and components); or with molecular and biological systems. However, in all these cases, the submitted manuscripts should explicitly address the electronic properties of the relevant systems, materials, or devices and/or present novel contributions to the physical models, computational strategies, or numerical algorithms.
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