Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-15 DOI:10.1109/TED.2024.3489595
Runhao Han;Tao Hu;Jia Yang;Mingkai Bai;Yajing Ding;Xianzhou Shao;Saifei Dai;Xiaoqing Sun;Junshuai Chai;Hao Xu;Kai Han;Xiaolei Wang;Wenwu Wang;Tianchun Ye
{"title":"Improvement of Memory Window of Silicon Channel Hf₀.₅Zr₀.₅O₂ FeFET by Inserting Al₂O₃/HfO₂/Al₂O₃ Top Interlayer","authors":"Runhao Han;Tao Hu;Jia Yang;Mingkai Bai;Yajing Ding;Xianzhou Shao;Saifei Dai;Xiaoqing Sun;Junshuai Chai;Hao Xu;Kai Han;Xiaolei Wang;Wenwu Wang;Tianchun Ye","doi":"10.1109/TED.2024.3489595","DOIUrl":null,"url":null,"abstract":"In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top dielectric interlayer between the ferroelectric Hf0.5Zr0.5O2 layer and the metal gate, where the gate-stack thickness is 14.8 nm. The physical origin is that the Al2O3/HfO2, HfO2/Al2O3, and Al2O3/Hf0.5Zr0.5O2 interfaces can trap charges from the metal gate, contributing to the MW enhancement. This AHA top dielectric multilayer effectively suppresses charge loss compared with a single Al2O3 top dielectric interlayer. Moreover, the de-trapping of charges injected from the metal gate is the primary factor for the degradation of the MW in this structure. Our work provides a guide for improving the MW of FeFET.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 12","pages":"7489-7494"},"PeriodicalIF":2.9000,"publicationDate":"2024-11-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10754632/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

In this work, we propose a gate structure to enhance the memory window (MW) of Si-channel Hf0.5Zr0.5O2 FeFETs. We achieve an MW of 10.04 V by inserting an Al2O3/HfO2/Al2O3 (AHA) top dielectric interlayer between the ferroelectric Hf0.5Zr0.5O2 layer and the metal gate, where the gate-stack thickness is 14.8 nm. The physical origin is that the Al2O3/HfO2, HfO2/Al2O3, and Al2O3/Hf0.5Zr0.5O2 interfaces can trap charges from the metal gate, contributing to the MW enhancement. This AHA top dielectric multilayer effectively suppresses charge loss compared with a single Al2O3 top dielectric interlayer. Moreover, the de-trapping of charges injected from the metal gate is the primary factor for the degradation of the MW in this structure. Our work provides a guide for improving the MW of FeFET.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
硅沟道Hf 0 .₅Zr 0存储窗口的改进。通过插入Al₂O₃/HfO₂/Al₂O₃顶层夹层₅O₂FeFET
在这项工作中,我们提出了一种栅极结构来提高硅沟道ffet的记忆窗口(MW)。通过在铁电层Hf0.5Zr0.5O2和金属栅极之间插入Al2O3/HfO2/Al2O3 (AHA)顶层介电层,栅极层厚度为14.8 nm,实现了10.04 V的MW。物理原因是Al2O3/HfO2、HfO2/Al2O3和Al2O3/Hf0.5Zr0.5O2界面可以捕获来自金属栅极的电荷,有助于MW增强。与单一Al2O3顶层介电层相比,AHA顶层介电层有效地抑制了电荷损失。此外,从金属栅注入的电荷的释放是该结构中MW退化的主要因素。本文的工作对提高效应场效应管的功率具有一定的指导意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
期刊最新文献
Table of Contents IEEE Transactions on Electron Devices Publication Information Corrections to “Stimulated Secondary Emission of Single-Photon Avalanche Diodes” Call for Papers: Journal of Lightwave Technology Special Issue on OFS-29 Call for Nominations for Editor-in-Chief: IEEE Transactions on Semiconductor Manufacturing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1