Zidu Li;Moin Diwan;Phil David Börner;Andreas Bablich;Heidemarie Schmidt;Peter Haring Bolívar;Bhaskar Choubey
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引用次数: 0
Abstract
An Ag/SiO
$_{2}$
/ITO thin-film memristor with a simple deposition technique that exhibits bidirectional threshold and bipolar memristive switching is presented. By applying adequate compliance currents, the switching mechanism of the memristor can be transitioned from threshold switching to bipolar switching. The reverse transition, from bipolar to threshold can be realized by applying a large negative current. This bidirectional switching is stable and reproducible, which has been proven by multiple experimental results. In addition, Verilog-A based modeling approach of this directional switching mechanism is also presented.
期刊介绍：
The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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