{"title":"A bright future for micro-LED displays","authors":"Vineeth K. Bandari, Oliver G. Schmidt","doi":"10.1038/s41377-024-01683-z","DOIUrl":null,"url":null,"abstract":"<p>The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 10<sup>7</sup> nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics.</p>","PeriodicalId":18069,"journal":{"name":"Light-Science & Applications","volume":"27 1","pages":""},"PeriodicalIF":23.4000,"publicationDate":"2024-12-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Light-Science & Applications","FirstCategoryId":"1089","ListUrlMain":"https://doi.org/10.1038/s41377-024-01683-z","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"OPTICS","Score":null,"Total":0}
引用次数: 0
Abstract
The development of GaN-based Micro-LED arrays achieving brightnesses exceeding 107 nits and high-density micro-displays with up to 1080×780 pixels marks a true breakthrough in the field. This breakthrough is a result of mastering a combination of long-standing challenges comprising wafer-scale high-quality epitaxial growth, sidewall passivation, efficient photon extraction, and elegant bonding technologies, and promises significant advantages for augmented and virtual reality devices, wearables, and next-generation consumer electronics.
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