A 0.22 mm² 0.5~4 GHz Active Single-Sideband Time Modulator With a Single Digital-Sequence Control

0 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE microwave and wireless technology letters Pub Date : 2024-10-09 DOI:10.1109/LMWT.2024.3471805
Guoxiao Cheng;Tao Wang;Zhihao Li;Jin-Dong Zhang;Qiaoyu Chen;Wen Wu
{"title":"A 0.22 mm² 0.5~4 GHz Active Single-Sideband Time Modulator With a Single Digital-Sequence Control","authors":"Guoxiao Cheng;Tao Wang;Zhihao Li;Jin-Dong Zhang;Qiaoyu Chen;Wen Wu","doi":"10.1109/LMWT.2024.3471805","DOIUrl":null,"url":null,"abstract":"This letter proposes a novel single-sideband time modulator (STM) that uses a periodically controlled 4-bit active vector modulator with regularly controlled gate widths. Timing sequences for control bits are generated from a single digital sequence using a \n<inline-formula> <tex-math>$\\div 16$ </tex-math></inline-formula>\n frequency divider. By precisely delaying the single digital sequence, the proposed active STM achieves high-precision and frequency-independent phase-shifting performance while enhancing the sideband suppression ratio (SSR) without raising insertion loss. Fabricated in 0.13-\n<inline-formula> <tex-math>$\\mu $ </tex-math></inline-formula>\n m CMOS technology, it occupies a compact area of \n<inline-formula> <tex-math>$1.1\\times 0.2$ </tex-math></inline-formula>\n mm2. Measured results show an equivalent 10-bit phase resolution, root mean square (rms) phase error of 0.13°~0.36°, and rms gain error of 0.05~0.31 dB in a frequency range of 0.5~4.0 GHz. The measured SSR is less than −23.5 dBc, and the instantaneous bandwidth is expanded to \n<inline-formula> <tex-math>$16~f_{\\text {P}}$ </tex-math></inline-formula>\n.","PeriodicalId":73297,"journal":{"name":"IEEE microwave and wireless technology letters","volume":"34 12","pages":"1375-1378"},"PeriodicalIF":0.0000,"publicationDate":"2024-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE microwave and wireless technology letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10710153/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"0","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

This letter proposes a novel single-sideband time modulator (STM) that uses a periodically controlled 4-bit active vector modulator with regularly controlled gate widths. Timing sequences for control bits are generated from a single digital sequence using a $\div 16$ frequency divider. By precisely delaying the single digital sequence, the proposed active STM achieves high-precision and frequency-independent phase-shifting performance while enhancing the sideband suppression ratio (SSR) without raising insertion loss. Fabricated in 0.13- $\mu $ m CMOS technology, it occupies a compact area of $1.1\times 0.2$ mm2. Measured results show an equivalent 10-bit phase resolution, root mean square (rms) phase error of 0.13°~0.36°, and rms gain error of 0.05~0.31 dB in a frequency range of 0.5~4.0 GHz. The measured SSR is less than −23.5 dBc, and the instantaneous bandwidth is expanded to $16~f_{\text {P}}$ .
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带单数字序列控制的0.22 mm²0.5~ 4ghz有源单边带时间调制器
这封信提出了一种新的单边带时间调制器(STM),它使用周期性控制的4位有源矢量调制器,具有定期控制的门宽。控制位的时序是使用$\div 16$分频器从单个数字序列生成的。通过精确延迟单数字序列,该有源STM在不增加插入损耗的情况下提高了边带抑制比(SSR),实现了高精度和频率无关的移相性能。它采用0.13- $\mu $ m CMOS技术制造,占地面积为$1.1\times 0.2$ mm2。测量结果表明,在0.5 4.0 GHz频率范围内,相位分辨率为10位,相位误差均方根(rms)为0.13°0.36°,增益误差均方根为0.05 0.31 dB。测得的SSR小于−23.5 dBc,瞬时带宽扩展到$16~f_{\text {P}}$。
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