A 15.4-ppm/°C GaN-Based Voltage Reference With Process-Variation-Immunity and High PSR for Electric Vehicle Power Systems

Abstract

The proposed gallium nitride (GaN)-based voltage reference ( $V_{\mathrm { REF}}$ ) generator has a low temperature coefficient (TC) of 15.4 ppm/°C, small $V_{\mathrm { REF}}$ deviation at different process corners (standard deviation of 0.22%), line sensitivity as low as 0.0023%/V, and high power supply rejection (PSR) of −187 and −114 dB at 100 Hz and 50 MHz, respectively. The proportional-to-absolute-temperature (PTAT) gate current for enhancement-mode GaN (eGaN) optimizes TC. Eliminating depletion-mode GaN (dGaN) gate leakage and using multiple stacked composite dGaNs can improve line regulation and PSR. All performance is achieved with a low power consumption of $10.9~\mu $ W.