Low-Threshold Surface-Emitting Whispering-Gallery Mode Microlasers

IF 4.3 2区 工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Journal of Selected Topics in Quantum Electronics Pub Date : 2024-11-21 DOI:10.1109/JSTQE.2024.3503724
Andrey Babichev;Ivan Makhov;Natalia Kryzhanovskaya;Sergey Troshkov;Yuriy Zadiranov;Yulia Salii;Marina Kulagina;Mikhail Bobrov;Alexey Vasil'ev;Sergey Blokhin;Nikolay Maleev;Leonid Karachinsky;Innokenty Novikov;Anton Egorov
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Abstract

We report on microlasers based on high-quality micropillars with whispering-gallery modes lasing. The use of low-absorbing Al 0.2 Ga 0.8 As/Al 0.9 Ga 0.1 As distributed Bragg reflectors and smooth pillar sidewalls enables whispering-gallery modes lasing by excitation and collection of emission in the pillar axis direction. Simultaneous whispering gallery modes lasing (comb-like structure) is observed in the wavelength range of 930–970 nm for 3–7 μm pillar diameters. Increasing the temperature to 130 K leads to single-mode lasing for 5 μm pillars with a cold cavity quality-factor of about 8000 and an estimated threshold excitation power of 240 μW. Lasing in the thermoelectrical cooling range (up to 170 K) has been demonstrated.
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低阈值表面发射啸叫-画廊模式微激光器
本文报道了一种基于高质量微柱的微激光器。采用低吸收Al0.2Ga0.8As/Al0.9Ga0.1As分布式Bragg反射器和光滑的柱侧壁,通过激发和收集柱轴方向的发射,实现了耳语廊模式的激光。在波长为930 ~ 970 nm、柱径为3 ~ 7 μm的范围内观察到同时存在的窃窃廊模式激光(梳状结构)。当温度提高到130 K时,可产生5 μm柱的单模激光,冷腔质量因子约为8000,估计阈值激发功率为240 μW。在热电冷却范围(高达170 K)激光已被证明。
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来源期刊
IEEE Journal of Selected Topics in Quantum Electronics
IEEE Journal of Selected Topics in Quantum Electronics 工程技术-工程:电子与电气
CiteScore
10.60
自引率
2.00%
发文量
212
审稿时长
3 months
期刊介绍: Papers published in the IEEE Journal of Selected Topics in Quantum Electronics fall within the broad field of science and technology of quantum electronics of a device, subsystem, or system-oriented nature. Each issue is devoted to a specific topic within this broad spectrum. Announcements of the topical areas planned for future issues, along with deadlines for receipt of manuscripts, are published in this Journal and in the IEEE Journal of Quantum Electronics. Generally, the scope of manuscripts appropriate to this Journal is the same as that for the IEEE Journal of Quantum Electronics. Manuscripts are published that report original theoretical and/or experimental research results that advance the scientific and technological base of quantum electronics devices, systems, or applications. The Journal is dedicated toward publishing research results that advance the state of the art or add to the understanding of the generation, amplification, modulation, detection, waveguiding, or propagation characteristics of coherent electromagnetic radiation having sub-millimeter and shorter wavelengths. In order to be suitable for publication in this Journal, the content of manuscripts concerned with subject-related research must have a potential impact on advancing the technological base of quantum electronic devices, systems, and/or applications. Potential authors of subject-related research have the responsibility of pointing out this potential impact. System-oriented manuscripts must be concerned with systems that perform a function previously unavailable or that outperform previously established systems that did not use quantum electronic components or concepts. Tutorial and review papers are by invitation only.
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