What’s next for FETs?

IF 33.7 1区工程技术 Q1 ENGINEERING, ELECTRICAL & ELECTRONIC Nature Electronics Pub Date : 2024-12-16 DOI:10.1038/s41928-024-01272-3

Mathieu Luisier

引用次数: 0

Abstract

Comprehensive device simulations reveal the potential of ultra-scaled field-effect transistors based on two-dimensional channel materials.

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FET 的下一步是什么？

全面的器件模拟揭示了基于二维沟道材料的超大规模场效应晶体管的潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nature Electronics Engineering-Electrical and Electronic Engineering

CiteScore

47.50

自引率

2.30%

发文量

159

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Optoelectronic synthesizer for tunable microwave generation with ultralow phase noise All-polymer electrochromic displays with a dual-functional polymer conductor An n-doped capacitive transparent conductor for all-polymer electrochromic displays What’s next for FETs? Three-dimensional transistors with two-dimensional semiconductors for future CMOS scaling