Atomic Molecular Representations of Erbium Powders Annealed by Thermal Doping of Porous Silicon

Abstract

This paper presents an atomic-molecular and topological description of widely used in the semiconductor and material construction industries erbium compounds obtained by temperature annealing during doping of porous silicon samples. The samples were instilled with an aqueous-alcoholic solution of erbium pentahydrate. The heat treatment lasted 30 minutes at an annealing temperature of 950°C. The obtained two powder phases of erbium were analyzed experimentally and theoretically. Decoded X-ray diffraction and Raman spectroscopy data of erbium powders are presented. The crystal-chemical approach has been applied to the topological analysis of the free space in sesquioxide and pentahydrate structures. The phase change in the chemical bond structure of annealed erbium compound led to changes in its optical and electrical properties. The main results of the study illustrate the importance of the stage of temperature doping with erbium ions of nanocrystalline structures of porous silicon and similar other dielectric materials for optoelectronic and photonic advances.