Growth-based monolithic 3D integration of single-crystal 2D semiconductors

IF 50.5 1区 综合性期刊 Q1 MULTIDISCIPLINARY SCIENCES Nature Pub Date : 2024-12-18 DOI:10.1038/s41586-024-08236-9
Ki Seok Kim, Seunghwan Seo, Junyoung Kwon, Doyoon Lee, Changhyun Kim, Jung-El Ryu, Jekyung Kim, Jun Min Suh, Hang-Gyo Jung, Youhwan Jo, June-Chul Shin, Min-Kyu Song, Jin Feng, Hogeun Ahn, Sangho Lee, Kyeongjae Cho, Jongwook Jeon, Minsu Seol, Jin-Hong Park, Sang Won Kim, Jeehwan Kim
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Abstract

The demand for the three-dimensional (3D) integration of electronic components is steadily increasing. Despite substantial processing challenges, the through-silicon-via (TSV) technique emerges as the only viable method for integrating single-crystalline device components in a 3D format1,2. Although monolithic 3D (M3D) integration schemes show promise3, the seamless connection of single-crystalline semiconductors without intervening wafers has yet to be demonstrated. This challenge arises from the inherent difficulty of growing single crystals on amorphous or polycrystalline surfaces after the back-end-of-the-line process at low temperatures to preserve the underlying circuitry. Consequently, a practical growth-based solution for M3D of single crystals remains unknown. Here we present a method for growing single-crystalline channel materials, specifically composed of transition metal dichalcogenides, on amorphous and polycrystalline surfaces at temperatures low enough to preserve the underlying electronic components. Building on this developed technique, we demonstrate the seamless monolithic integration of vertical single-crystalline logic transistor arrays. This accomplishment leads to the development of unprecedented vertical complementary metal oxide semiconductor (CMOS) arrays composed of grown single-crystalline channels. Ultimately, this achievement provides opportunities for M3D integration of various electronic hardware in the form of single crystals. Single-crystalline materials can be grown on amorphous surfaces at below 400 °C, enabling monolithic three-dimensional integration of vertically stacked transistors.

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来源期刊
Nature
Nature 综合性期刊-综合性期刊
CiteScore
90.00
自引率
1.20%
发文量
3652
审稿时长
3 months
期刊介绍: Nature is a prestigious international journal that publishes peer-reviewed research in various scientific and technological fields. The selection of articles is based on criteria such as originality, importance, interdisciplinary relevance, timeliness, accessibility, elegance, and surprising conclusions. In addition to showcasing significant scientific advances, Nature delivers rapid, authoritative, insightful news, and interpretation of current and upcoming trends impacting science, scientists, and the broader public. The journal serves a dual purpose: firstly, to promptly share noteworthy scientific advances and foster discussions among scientists, and secondly, to ensure the swift dissemination of scientific results globally, emphasizing their significance for knowledge, culture, and daily life.
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