Orientation-Related Giant Photothermoelectric Energy Conversion in Quasi-One-Dimensional van der Waals TaSe3 Crystals

IF 16 1区 材料科学 Q1 CHEMISTRY, MULTIDISCIPLINARY ACS Nano Pub Date : 2024-12-19 DOI:10.1021/acsnano.4c15136
Bingxuan Zhu, Jun-Jie Wu, Dong Li, Chengyi Zhu, Pei-Yu Huang, Lin-Qing Yue, Ruo-Yao Sun, Sheng Qiang, Liang Zhen, Jing-Kai Qin, Cheng-Yan Xu
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Abstract

Featuring the capabilities of self-power, low dark current, and broadband response, photothermoelectric (PTE) detection demonstrates great potential for application in the military and civilian fields. The development of materials with an intrinsically high efficiency for PTE energy conversion and the in-depth study of its thermoelectric properties on the device performance are of great significance. Here, we reported a quasi-one-dimensional (quasi-1D) van der Waals (vdW) TaSe3 crystal as a promising material candidate for PTE detection. Benefiting from the 1D confined effect for photon and electron transport, the TaSe3 nanoribbon crystallized along the atomic chain direction demonstrates a size-dependent thermal conductivity and Seebeck coefficient. With the nanoribbon width downscaled from 5.7 μm to 200 nm, the resulting PTE detector reveals a pronouncedly enhanced photoresponsivity by more than 1 order of magnitude, demonstrating an extremely high value of 33 V/W among the best state-of-the-art PTE devices. More importantly, the anisotropic electrical, thermal, and thermoelectric properties in the TaSe3 crystal contribute to the orientation-related PTE energy conversion, yielding an anisotropic ratio of photoresponsivity as large as 2.5 under 532 nm light illumination. Our study provides experimental evidence of orientation-related giant PTE photodetection in the quasi-1D vdW TaSe3 crystal, which provides possibilities for the development of future optoelectronic devices.

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准一维范德华晶体中与取向相关的巨大光热电能量转换
光热电(PTE)检测具有自供电、低暗电流、宽带响应等特点,在军事和民用领域具有巨大的应用潜力。开发具有内在高效率的PTE能量转换材料,深入研究其热电性质对器件性能的影响具有重要意义。在这里,我们报道了一种准一维(准1d)范德华(vdW) TaSe3晶体作为PTE检测的有前途的候选材料。受益于光子和电子传递的一维约束效应,沿着原子链方向结晶的TaSe3纳米带表现出与尺寸相关的导热系数和塞贝克系数。随着纳米带宽度从5.7 μm缩小到200 nm,由此产生的PTE探测器的光响应性明显提高了1个数量级以上,在最先进的PTE器件中显示出极高的33 V/W值。更重要的是,TaSe3晶体的各向异性电学、热学和热电性质有助于与取向相关的PTE能量转换,在532 nm光照下,其光响应率的各向异性比高达2.5。我们的研究为准一维vdW TaSe3晶体中取向相关的巨型PTE光探测提供了实验证据,为未来光电器件的发展提供了可能性。
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来源期刊
ACS Nano
ACS Nano 工程技术-材料科学:综合
CiteScore
26.00
自引率
4.10%
发文量
1627
审稿时长
1.7 months
期刊介绍: ACS Nano, published monthly, serves as an international forum for comprehensive articles on nanoscience and nanotechnology research at the intersections of chemistry, biology, materials science, physics, and engineering. The journal fosters communication among scientists in these communities, facilitating collaboration, new research opportunities, and advancements through discoveries. ACS Nano covers synthesis, assembly, characterization, theory, and simulation of nanostructures, nanobiotechnology, nanofabrication, methods and tools for nanoscience and nanotechnology, and self- and directed-assembly. Alongside original research articles, it offers thorough reviews, perspectives on cutting-edge research, and discussions envisioning the future of nanoscience and nanotechnology.
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