Narrow-Bandwidth I–III–VI Semiconductor Nanocrystals: Synthesis, Luminescence and Applications in Quantum-Dot Light-Emitting Diodes

Xiulin Xie, Tianyi Jiang, Ouyang Lin, Jiahao Liu, Yu Zhang, Aiwei Tang
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Abstract

I-III-VI semiconductor nanocrystals (NCs) have emerged as promising candidates in quantum-dot light-emitting diodes (QLEDs) due to their environmental-benign nature and capability for large-scale tunable emission as well as straightforward synthesis. However, the photoluminescence (PL) emission of I–III–VI type NCs, as reported in numerous studies, exhibits a broader full width at half maximum (FWHM), adversely affecting their color purity. This review delineates the advancements in the development of narrow-bandwidth I–III–VI NCs, focusing on their synthesis strategies, luminescence mechanisms, and applications in QLEDs. It concludes with a discussion on the challenges confronting narrow-bandwidth I–III–VI-based QLEDs and outlines potential strategies for improving device performance.

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I-III-VI 型半导体纳米晶体(NCs)因其对环境无害的性质、大规模可调发射的能力以及简单的合成方法,已成为量子点发光二极管(QLEDs)的理想候选材料。然而,正如大量研究报告所述,I-III-VI 型 NC 的光致发光(PL)发射呈现出较宽的半最大全宽(FWHM),对其颜色纯度产生了不利影响。本综述介绍了开发窄带宽 I-III-VI NCs 的进展,重点关注其合成策略、发光机制以及在 QLED 中的应用。最后还讨论了基于 I-III-VI 的窄带 QLED 所面临的挑战,并概述了提高器件性能的潜在策略。
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