InAs Terahertz Metalens Emitter for Focused Terahertz Beam Generation

IF 3.7 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Advanced Photonics Research Pub Date : 2024-10-13 DOI:10.1002/adpr.202400125
Hyunseung Jung, Igal Brener, Sadhvikas J. Addamane, Ting Shan Luk, C. Thomas Harris, Ganapathi Subramania, Oleg Mitrofanov
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Abstract

Metasurfaces have opened doors to combining multiple photonic functionalities in a single compact device. In particular, the ability to generate short terahertz (THz) pulses with precise wavefront engineering in a single THz metasurface redefined the role metasurfaces can play in THz systems. Here, an InAs metalens emitter which generates and focuses a THz pulse beam is demonstrated using a 130 nm thick InAs metasurface designed as a binary-phase Fresnel zone plate. The THz beam is focused to a spot of ≈430 μm at 1 THz with a short focal length of 5 mm and large numerical aperture of 0.5. Nanoscale InAs Mie resonators comprising the metasurface enable THz generation with an amplitude as high as 20 times compared to plasmonic THz emitters and several times compared to a 1 mm thick ZnTe crystal. This InAs metasurface emitter provides a new paradigm for designing THz imaging, spectroscopy, and communication systems, where THz beam generation and shaping are performed with a single device without compromising the generation efficiency, while eliminating losses and avoiding limitations of phase matching of conventional nonlinear optics approaches.

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聚焦太赫兹光束产生的InAs太赫兹超透镜发射器
超表面打开了一扇门,在一个单一的紧凑的设备中结合多个光子功能。特别是,在单个太赫兹元表面上通过精确的波前工程产生短太赫兹(THz)脉冲的能力重新定义了元表面在太赫兹系统中可以发挥的作用。在这里,使用设计为二相菲涅耳带板的130 nm厚的InAs超表面,演示了一个产生和聚焦太赫兹脉冲光束的InAs超透镜发射器。太赫兹光束在1太赫兹下聚焦到约430 μm的光斑上,焦距为5 mm,数值孔径为0.5。包含超表面的纳米级InAs Mie谐振器使太赫兹产生的幅度高达等离子体太赫兹发射器的20倍,是1毫米厚ZnTe晶体的几倍。这种InAs超表面发射器为设计太赫兹成像、光谱和通信系统提供了一种新的范例,在这种系统中,太赫兹波束的产生和整形是在一个设备上完成的,而不会影响产生效率,同时消除了损耗,避免了传统非线性光学方法的相位匹配限制。
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