Lasers with double asymmetric barrier layers: Direct versus indirect capture of carriers into the lasing ground state in quantum dots

IF 0.7 4区 工程技术 Q4 ENGINEERING, ELECTRICAL & ELECTRONIC Electronics Letters Pub Date : 2024-12-19 DOI:10.1049/ell2.70117
Cody Hammack, Levon V. Asryan
{"title":"Lasers with double asymmetric barrier layers: Direct versus indirect capture of carriers into the lasing ground state in quantum dots","authors":"Cody Hammack,&nbsp;Levon V. Asryan","doi":"10.1049/ell2.70117","DOIUrl":null,"url":null,"abstract":"<p>Static and dynamic characteristics of a quantum dot (QD) laser with double asymmetric barrier layers – an advanced type of semiconductor laser – are studied. Both direct and indirect capture of carriers into the lasing ground state in QDs is considered. The intradot relaxation of carriers, which controls the laser characteristics in the case of only indirect capture, is shown to not be a significant factor in the case of both direct and indirect capture. In the latter case, both the output optical power and modulation bandwidth are considerably increased.</p>","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":"60 24","pages":""},"PeriodicalIF":0.7000,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70117","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Letters","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/ell2.70117","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

Abstract

Static and dynamic characteristics of a quantum dot (QD) laser with double asymmetric barrier layers – an advanced type of semiconductor laser – are studied. Both direct and indirect capture of carriers into the lasing ground state in QDs is considered. The intradot relaxation of carriers, which controls the laser characteristics in the case of only indirect capture, is shown to not be a significant factor in the case of both direct and indirect capture. In the latter case, both the output optical power and modulation bandwidth are considerably increased.

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来源期刊
Electronics Letters
Electronics Letters 工程技术-工程:电子与电气
CiteScore
2.70
自引率
0.00%
发文量
268
审稿时长
3.6 months
期刊介绍: Electronics Letters is an internationally renowned peer-reviewed rapid-communication journal that publishes short original research papers every two weeks. Its broad and interdisciplinary scope covers the latest developments in all electronic engineering related fields including communication, biomedical, optical and device technologies. Electronics Letters also provides further insight into some of the latest developments through special features and interviews. Scope As a journal at the forefront of its field, Electronics Letters publishes papers covering all themes of electronic and electrical engineering. The major themes of the journal are listed below. Antennas and Propagation Biomedical and Bioinspired Technologies, Signal Processing and Applications Control Engineering Electromagnetism: Theory, Materials and Devices Electronic Circuits and Systems Image, Video and Vision Processing and Applications Information, Computing and Communications Instrumentation and Measurement Microwave Technology Optical Communications Photonics and Opto-Electronics Power Electronics, Energy and Sustainability Radar, Sonar and Navigation Semiconductor Technology Signal Processing MIMO
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