Static and dynamic characteristics of a quantum dot (QD) laser with double asymmetric barrier layers – an advanced type of semiconductor laser – are studied. Both direct and indirect capture of carriers into the lasing ground state in QDs is considered. The intradot relaxation of carriers, which controls the laser characteristics in the case of only indirect capture, is shown to not be a significant factor in the case of both direct and indirect capture. In the latter case, both the output optical power and modulation bandwidth are considerably increased.
{"title":"Lasers with double asymmetric barrier layers: Direct versus indirect capture of carriers into the lasing ground state in quantum dots","authors":"Cody Hammack, Levon V. Asryan","doi":"10.1049/ell2.70117","DOIUrl":"https://doi.org/10.1049/ell2.70117","url":null,"abstract":"<p>Static and dynamic characteristics of a quantum dot (QD) laser with double asymmetric barrier layers – an advanced type of semiconductor laser – are studied. Both direct and indirect capture of carriers into the lasing ground state in QDs is considered. The intradot relaxation of carriers, which controls the laser characteristics in the case of only indirect capture, is shown to not be a significant factor in the case of both direct and indirect capture. In the latter case, both the output optical power and modulation bandwidth are considerably increased.</p>","PeriodicalId":11556,"journal":{"name":"Electronics Letters","volume":"60 24","pages":""},"PeriodicalIF":0.7,"publicationDate":"2024-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1049/ell2.70117","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142869001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This work reports a W-band 2-stage stacked LNA featuring post-distortion non-linearity cancellation (PDC) with programmable gain and enhanced common-mode (CM) stability, fabricated in TSMC 28-nm complementary metal oxide semiconductor (CMOS). The PDC technique employs diode-connected NMOS transistors to enhance linearity. The diodes are connected to drains of the stage one and, therefore, are isolated from the input, leading to minimal impact on input matching. Since the diodes are in strong inversion, they track well with the main transistors, resulting in robust cancellation across PVT. Additionally, the diodes also enhance the CM stability of the LNA by reducing the CM gain. Use of stacked architecture lowers the DC power consumption, through current re-use in the two stages. Switchable neutralized differential pair cells are used in stage one to achieve variable gain. The LNA consumes 31 mW of power with an IP1dB of -5.5 dBm and IIP3 of 6 dBm leading to an figure-of-merit (FOM) of 31.3 dB. The peak gain is 13 dB at 84.2 GHz, and it maintains