{"title":"Study on Electromagnetic Pulse Damage of 22nm FDSOI in Radiation Environment","authors":"Chen Chong;Xing Li;Hongxia Liu;Wei Zhou;Menghao Huang","doi":"10.1109/TDMR.2024.3485095","DOIUrl":null,"url":null,"abstract":"This paper simulates the damage of 22nm FDSOI devices under strong electromagnetic pulse in radiation environment. After the introduction of strong electromagnetic pulse in the non-radiating device, the drain - body junction in the center of the device is damaged due to thermal deposition. The results of the strong electromagnetic damage of the device after different total ionizing doses of radiation show that the trap charge trapped in the oxide layer enhances the inverse pattern of the device after radiation. At the same time when the strong electromagnetic pulse is introduced, the electric field intensity in the channel region decreases and the current density increases compared with that before radiation. As a result, the thermal power density of the device increases and the thermal damage time point of the device advances. Finally, the simulation results of different radiation regions show that the trap charge in the BOX layer is the main reason for the reliability reduction of the device.","PeriodicalId":448,"journal":{"name":"IEEE Transactions on Device and Materials Reliability","volume":"24 4","pages":"646-655"},"PeriodicalIF":2.5000,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Device and Materials Reliability","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10730797/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This paper simulates the damage of 22nm FDSOI devices under strong electromagnetic pulse in radiation environment. After the introduction of strong electromagnetic pulse in the non-radiating device, the drain - body junction in the center of the device is damaged due to thermal deposition. The results of the strong electromagnetic damage of the device after different total ionizing doses of radiation show that the trap charge trapped in the oxide layer enhances the inverse pattern of the device after radiation. At the same time when the strong electromagnetic pulse is introduced, the electric field intensity in the channel region decreases and the current density increases compared with that before radiation. As a result, the thermal power density of the device increases and the thermal damage time point of the device advances. Finally, the simulation results of different radiation regions show that the trap charge in the BOX layer is the main reason for the reliability reduction of the device.
期刊介绍：
The scope of the publication includes, but is not limited to Reliability of: Devices, Materials, Processes, Interfaces, Integrated Microsystems (including MEMS & Sensors), Transistors, Technology (CMOS, BiCMOS, etc.), Integrated Circuits (IC, SSI, MSI, LSI, ULSI, ELSI, etc.), Thin Film Transistor Applications. The measurement and understanding of the reliability of such entities at each phase, from the concept stage through research and development and into manufacturing scale-up, provides the overall database on the reliability of the devices, materials, processes, package and other necessities for the successful introduction of a product to market. This reliability database is the foundation for a quality product, which meets customer expectation. A product so developed has high reliability. High quality will be achieved because product weaknesses will have been found (root cause analysis) and designed out of the final product. This process of ever increasing reliability and quality will result in a superior product. In the end, reliability and quality are not one thing; but in a sense everything, which can be or has to be done to guarantee that the product successfully performs in the field under customer conditions. Our goal is to capture these advances. An additional objective is to focus cross fertilized communication in the state of the art of reliability of electronic materials and devices and provide fundamental understanding of basic phenomena that affect reliability. In addition, the publication is a forum for interdisciplinary studies on reliability. An overall goal is to provide leading edge/state of the art information, which is critically relevant to the creation of reliable products.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
