Advancements in 2D layered material memristors: unleashing their potential beyond memory

IF 9.1 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY npj 2D Materials and Applications Pub Date : 2024-12-21 DOI:10.1038/s41699-024-00522-4
Kiran A. Nirmal, Dhananjay D. Kumbhar, Arul Varman Kesavan, Tukaram D. Dongale, Tae Geun Kim
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Abstract

The scalability of two-dimensional (2D) materials down to a single monolayer offers exciting prospects for high-speed, energy-efficient, scalable memristors. This review highlights the development of 2D material-based memristors and potential applications beyond memory, including neuromorphic, in-memory, in-sensor, and complex computing. This review also encompasses potential challenges and future opportunities for advancing these materials and technologies, underscoring the transformative impact of 2D memristors on versatile and sustainable electronic devices and systems.

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二维层状材料忆阻器的进展:释放其超越记忆的潜力
二维(2D)材料的可扩展性降低到单个单层,为高速,节能,可扩展的记忆电阻器提供了令人兴奋的前景。这篇综述强调了基于二维材料的忆阻器的发展及其在内存之外的潜在应用,包括神经形态、内存、传感器和复杂计算。本综述还涵盖了推进这些材料和技术的潜在挑战和未来机遇,强调了2D记忆电阻器对多功能和可持续电子设备和系统的变革性影响。
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来源期刊
npj 2D Materials and Applications
npj 2D Materials and Applications Engineering-Mechanics of Materials
CiteScore
14.50
自引率
2.10%
发文量
80
审稿时长
15 weeks
期刊介绍: npj 2D Materials and Applications publishes papers on the fundamental behavior, synthesis, properties and applications of existing and emerging 2D materials. By selecting papers with the potential for impact, the journal aims to facilitate the transfer of the research of 2D materials into wide-ranging applications.
期刊最新文献
Layer-by-layer assembly yields thin graphene films with near theoretical conductivity. Advancements in 2D layered material memristors: unleashing their potential beyond memory First-principles study of the magneto-Raman effect in van der Waals layered magnets Memristors based on two-dimensional h-BN materials: synthesis, mechanism, optimization and application Revisiting the origin of non-volatile resistive switching in MoS2 atomristor
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