Experimental Evaluation of Silicon Nitride Memristors as Coupling Elements for Chimera States in Chaotic Oscillator Networks

IF 4.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2024-09-24 DOI:10.1109/TCSII.2024.3466963
Karolos-Alexandros Tsakalos;Vasileios Ntinas;Nikolaos Vasileiadis;Astero Provata;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis
{"title":"Experimental Evaluation of Silicon Nitride Memristors as Coupling Elements for Chimera States in Chaotic Oscillator Networks","authors":"Karolos-Alexandros Tsakalos;Vasileios Ntinas;Nikolaos Vasileiadis;Astero Provata;Panagiotis Dimitrakis;Georgios Ch. Sirakoulis","doi":"10.1109/TCSII.2024.3466963","DOIUrl":null,"url":null,"abstract":"Chimera states have attracted significant research interest due to their potential in modeling brain network functionality. Memristive nano-crossbars, known for their energy efficiency, massive parallelism, and synaptic-like properties, serve as a promising coupling medium in brain-inspired applications. The operation of these devices is strongly dictated by the non-linear mechanisms of memristor devices when studying synchronization phenomena. Expanding upon our previous work, which explored sneak-path currents in Chimera states, this study investigates the impact of fabricated Silicon Nitride (SiN) devices on the dynamics of Chua circuit (CC) networks. We conducted experimental evaluations to confirm the ability of SiN devices to retain their resistance state, thereby ensuring consistency in the crossbar array, a critical factor in maintaining chimera states during experiments. We employed an exponential memristor model to further investigate the non-linear dynamics within the CC network. Our results not only confirm the formation of various synchronization structures, such as chimera states and full chaotic synchronization but also reveal the intriguing formation of phase-lag structures. These structures, induced by the SiN-fitted model, exhibit distinctive characteristics marked by subtle and non-linear coupling behaviors, particularly evident at near-zero voltages. After analyzing our results, we present a comprehensive phase-parametric regime map, obtained by varying the coupling strength bifurcation parameter. This map provides valuable insights into the mechanisms governing the dynamics of CC networks equipepd with SiN-based memristor nanodevices, which have proven capable of capturing the complex dynamics of chimera states.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 1","pages":"33-37"},"PeriodicalIF":4.9000,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10690178/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

Chimera states have attracted significant research interest due to their potential in modeling brain network functionality. Memristive nano-crossbars, known for their energy efficiency, massive parallelism, and synaptic-like properties, serve as a promising coupling medium in brain-inspired applications. The operation of these devices is strongly dictated by the non-linear mechanisms of memristor devices when studying synchronization phenomena. Expanding upon our previous work, which explored sneak-path currents in Chimera states, this study investigates the impact of fabricated Silicon Nitride (SiN) devices on the dynamics of Chua circuit (CC) networks. We conducted experimental evaluations to confirm the ability of SiN devices to retain their resistance state, thereby ensuring consistency in the crossbar array, a critical factor in maintaining chimera states during experiments. We employed an exponential memristor model to further investigate the non-linear dynamics within the CC network. Our results not only confirm the formation of various synchronization structures, such as chimera states and full chaotic synchronization but also reveal the intriguing formation of phase-lag structures. These structures, induced by the SiN-fitted model, exhibit distinctive characteristics marked by subtle and non-linear coupling behaviors, particularly evident at near-zero voltages. After analyzing our results, we present a comprehensive phase-parametric regime map, obtained by varying the coupling strength bifurcation parameter. This map provides valuable insights into the mechanisms governing the dynamics of CC networks equipepd with SiN-based memristor nanodevices, which have proven capable of capturing the complex dynamics of chimera states.
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氮化硅忆阻器作为混沌振荡器网络中嵌合体态耦合元件的实验评价
嵌合体状态由于其在模拟大脑网络功能方面的潜力而引起了极大的研究兴趣。忆阻纳米交叉棒,以其能量效率,大规模并行性和突触样特性而闻名,在大脑启发应用中作为一种有前途的耦合介质。在研究同步现象时,这些器件的工作在很大程度上取决于忆阻器器件的非线性机制。在我们之前研究奇美拉状态下的潜行路径电流的基础上,本研究探讨了制备的氮化硅(SiN)器件对蔡氏电路(CC)网络动力学的影响。我们进行了实验评估,以确认SiN器件保持其电阻状态的能力,从而确保交叉棒阵列的一致性,这是在实验中保持嵌合体状态的关键因素。我们采用指数忆阻器模型来进一步研究CC网络中的非线性动力学。我们的研究结果不仅证实了各种同步结构的形成,如嵌合态和全混沌同步,而且揭示了相位滞后结构的有趣形成。这些结构由sin拟合模型诱导,表现出微妙的非线性耦合行为,特别是在接近零电压时。在分析了我们的结果之后,我们提出了一个综合的相位-参数状态图,通过改变耦合强度分岔参数得到。这张图提供了有价值的见解,以控制机制的CC网络的动态配备基于sin的忆阻纳米器件,这已被证明能够捕捉嵌合体状态的复杂动态。
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来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
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