{"title":"Performance Enhancement of InGaN Laser Photovoltaic Cell With AlGaN Strain Compensation Layer Irradiated by 450 nm Laser","authors":"Heng-Sheng Shan;Yi-Xin Wang;Cheng-Ke Li;Ning Wang;Xiao-Ya Li;Shu-Fang Ma;Bing-She Xu","doi":"10.1109/JPHOTOV.2024.3495024","DOIUrl":null,"url":null,"abstract":"A high-efficiency indium gallium nitride (InGaN) laser photovoltaic cell (LPVC) was demonstrated to achieve a photoelectric conversion efficiency (η) of 23.09% by incorporating an AlGaN strain compensation layer (SCL) grown on a (0001)-oriented patterned sapphire substrate (PSS). The photoluminescence spectra confirm that the peak splitting is reduced after the insertion of AlGaN SCL, indicating a more uniform distribution of In. In addition, the full width at half maximum of the sample is narrowed, indicating that the crystal quality is improved after the insertion of AlGaN SCL. The X-ray diffraction analysis reveals the effective modulation of strain relaxation in InGaN materials by the AlGaN SCL, enhancing steepness of the interface between the well and the barrier in the active region compared with materials without the AlGaN SCL. Furthermore, Raman analysis shows an additional release of GaN compressive stress in InGaN materials, providing full validation for the stress regulation model from introducing the AlGaN SCL. Finally, introducing material parameters into Silvaco software resulted in simulation and experimental errors of less than 2%, the critical role of SCL in efficiency improvement is validated. Valuable insights on optimizing device design for high-efficiency InGaN LPVCs are provided.","PeriodicalId":445,"journal":{"name":"IEEE Journal of Photovoltaics","volume":"15 1","pages":"105-109"},"PeriodicalIF":2.5000,"publicationDate":"2024-11-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of Photovoltaics","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10764776/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENERGY & FUELS","Score":null,"Total":0}
引用次数: 0
Abstract
A high-efficiency indium gallium nitride (InGaN) laser photovoltaic cell (LPVC) was demonstrated to achieve a photoelectric conversion efficiency (η) of 23.09% by incorporating an AlGaN strain compensation layer (SCL) grown on a (0001)-oriented patterned sapphire substrate (PSS). The photoluminescence spectra confirm that the peak splitting is reduced after the insertion of AlGaN SCL, indicating a more uniform distribution of In. In addition, the full width at half maximum of the sample is narrowed, indicating that the crystal quality is improved after the insertion of AlGaN SCL. The X-ray diffraction analysis reveals the effective modulation of strain relaxation in InGaN materials by the AlGaN SCL, enhancing steepness of the interface between the well and the barrier in the active region compared with materials without the AlGaN SCL. Furthermore, Raman analysis shows an additional release of GaN compressive stress in InGaN materials, providing full validation for the stress regulation model from introducing the AlGaN SCL. Finally, introducing material parameters into Silvaco software resulted in simulation and experimental errors of less than 2%, the critical role of SCL in efficiency improvement is validated. Valuable insights on optimizing device design for high-efficiency InGaN LPVCs are provided.
期刊介绍：
The IEEE Journal of Photovoltaics is a peer-reviewed, archival publication reporting original and significant research results that advance the field of photovoltaics (PV). The PV field is diverse in its science base ranging from semiconductor and PV device physics to optics and the materials sciences. The journal publishes articles that connect this science base to PV science and technology. The intent is to publish original research results that are of primary interest to the photovoltaic specialist. The scope of the IEEE J. Photovoltaics incorporates: fundamentals and new concepts of PV conversion, including those based on nanostructured materials, low-dimensional physics, multiple charge generation, up/down converters, thermophotovoltaics, hot-carrier effects, plasmonics, metamorphic materials, luminescent concentrators, and rectennas; Si-based PV, including new cell designs, crystalline and non-crystalline Si, passivation, characterization and Si crystal growth; polycrystalline, amorphous and crystalline thin-film solar cell materials, including PV structures and solar cells based on II-VI, chalcopyrite, Si and other thin film absorbers; III-V PV materials, heterostructures, multijunction devices and concentrator PV; optics for light trapping, reflection control and concentration; organic PV including polymer, hybrid and dye sensitized solar cells; space PV including cell materials and PV devices, defects and reliability, environmental effects and protective materials; PV modeling and characterization methods; and other aspects of PV, including modules, power conditioning, inverters, balance-of-systems components, monitoring, analyses and simulations, and supporting PV module standards and measurements. Tutorial and review papers on these subjects are also published and occasionally special issues are published to treat particular areas in more depth and breadth.
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