{"title":"A 200-MS/s 12-b Cryo-CMOS CS DAC for Quantum Computing","authors":"Changchun Zhou;Xuexi He;Bolun Zeng;Jun Xu;Chao Luo;Guoping Guo","doi":"10.1109/TCSII.2024.3502462","DOIUrl":null,"url":null,"abstract":"This brief presents a 200 MS/s 12 bits cryogenic CMOS (cryo-CMOS) current steering (CS) digital to analog converter (DAC) designed to operate from 300K down to 4 K. The DAC is designed and simulated using a 110nm cryo-CMOS SPICE model, achieving practical performance at 4K. Mismatch in transistor threshold voltage, carrier mobility and layout at cryogenic temperature can lead to unpredictability and incorrect bias voltage, so an off-chip resistor current mirror structure was adopted for the bias circuit. Due to the flexible configuration of the off-chip resistance value and the PMOS current source, this bias structure has certain advantages in overcoming the extended cryogenic nonlinear and mismatch effects to get the correct bias voltage at 4K. This DAC is implemented in a 110nm CMOS process, with a core area <\n<inline-formula> <tex-math>$0.21{mm}^{2}$ </tex-math></inline-formula>\n. With 9mA full-scale output current, this DAC consumes less than 22mW at 4K. The SFDR achieves 57.94dB, 48.59dB, and 35.33dB at 4.76MHz, 43.67MHz, and 93.47MHz frequency of full swing output, respectively, at 200MS/s and 4K, and the differential and integral nonlinearity are 0.79 LSB and 3.81 LSB, respectively, at 4K.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 1","pages":"98-102"},"PeriodicalIF":4.0000,"publicationDate":"2024-11-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10757326/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
This brief presents a 200 MS/s 12 bits cryogenic CMOS (cryo-CMOS) current steering (CS) digital to analog converter (DAC) designed to operate from 300K down to 4 K. The DAC is designed and simulated using a 110nm cryo-CMOS SPICE model, achieving practical performance at 4K. Mismatch in transistor threshold voltage, carrier mobility and layout at cryogenic temperature can lead to unpredictability and incorrect bias voltage, so an off-chip resistor current mirror structure was adopted for the bias circuit. Due to the flexible configuration of the off-chip resistance value and the PMOS current source, this bias structure has certain advantages in overcoming the extended cryogenic nonlinear and mismatch effects to get the correct bias voltage at 4K. This DAC is implemented in a 110nm CMOS process, with a core area <
$0.21{mm}^{2}$
. With 9mA full-scale output current, this DAC consumes less than 22mW at 4K. The SFDR achieves 57.94dB, 48.59dB, and 35.33dB at 4.76MHz, 43.67MHz, and 93.47MHz frequency of full swing output, respectively, at 200MS/s and 4K, and the differential and integral nonlinearity are 0.79 LSB and 3.81 LSB, respectively, at 4K.
期刊介绍:
TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes:
Circuits: Analog, Digital and Mixed Signal Circuits and Systems
Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic
Circuits and Systems, Power Electronics and Systems
Software for Analog-and-Logic Circuits and Systems
Control aspects of Circuits and Systems.