Fabrication of SnS2/Si Heterostructure for Ultra-High Selective and Rapid Room Temperature NO2 Gas Detection with Enhanced Carrier Mobility

IF 8 1区化学 Q1 CHEMISTRY, ANALYTICAL Sensors and Actuators B: Chemical Pub Date : 2024-12-25 DOI:10.1016/j.snb.2024.137165

R Abimaheshwari, T Murugadass, R Abinaya, M Navaneethan, S Harish

{"title":"Fabrication of SnS2/Si Heterostructure for Ultra-High Selective and Rapid Room Temperature NO2 Gas Detection with Enhanced Carrier Mobility","authors":"R Abimaheshwari, T Murugadass, R Abinaya, M Navaneethan, S Harish","doi":"10.1016/j.snb.2024.137165","DOIUrl":null,"url":null,"abstract":"The formation of heterostructure offers significant potential to improve sensor performance due to its unique interfacial properties. In this work, we report the fabrication of highly efficient <span><span style=\"\"><math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"italic\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub><mo is=\"true\">/</mo><mi is=\"true\" mathvariant=\"italic\">Si</mi></math></span><span style=\"font-size: 90%; display: inline-block;\" tabindex=\"0\"></span><script type=\"math/mml\"><math><msub is=\"true\"><mrow is=\"true\"><mi mathvariant=\"italic\" is=\"true\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub><mo is=\"true\">/</mo><mi mathvariant=\"italic\" is=\"true\">Si</mi></math></script></span> heterostructure based gas sensor for room temperature detection (30 °C) of <span><span style=\"\"><math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"italic\">NO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></span><span style=\"font-size: 90%; display: inline-block;\" tabindex=\"0\"></span><script type=\"math/mml\"><math><msub is=\"true\"><mrow is=\"true\"><mi mathvariant=\"italic\" is=\"true\">NO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></script></span>. The <span><span style=\"\"><math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"italic\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub><mo is=\"true\">/</mo><mi is=\"true\" mathvariant=\"italic\">Si</mi></math></span><span style=\"font-size: 90%; display: inline-block;\" tabindex=\"0\"></span><script type=\"math/mml\"><math><msub is=\"true\"><mrow is=\"true\"><mi mathvariant=\"italic\" is=\"true\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub><mo is=\"true\">/</mo><mi mathvariant=\"italic\" is=\"true\">Si</mi></math></script></span> sensor exhibits an outstanding sensing response of 671% towards 40 ppm of <span><span style=\"\"><math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"italic\">NO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></span><span style=\"font-size: 90%; display: inline-block;\" tabindex=\"0\"></span><script type=\"math/mml\"><math><msub is=\"true\"><mrow is=\"true\"><mi mathvariant=\"italic\" is=\"true\">NO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></script></span>, which is 4.5 times higher than that of <span><span style=\"\"><math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"italic\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></span><span style=\"font-size: 90%; display: inline-block;\" tabindex=\"0\"></span><script type=\"math/mml\"><math><msub is=\"true\"><mrow is=\"true\"><mi mathvariant=\"italic\" is=\"true\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></script></span>. Moreover, it shows fast response and recovery time of 26 s and 51.5 s, respectively. It shows a distinct selectivity towards <span><span style=\"\"><math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"italic\">NO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></span><span style=\"font-size: 90%; display: inline-block;\" tabindex=\"0\"></span><script type=\"math/mml\"><math><msub is=\"true\"><mrow is=\"true\"><mi mathvariant=\"italic\" is=\"true\">NO</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub></math></script></span> with excellent reproducibility and a low detection limit of 171 ppb, maintaining 93.8% of stability over 30 days. The enhanced sensing performance is attributed to the accelerated charge transfer rate and carrier mobility resulting from the formation of <span><span style=\"\"><math><msub is=\"true\"><mrow is=\"true\"><mi is=\"true\" mathvariant=\"italic\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub><mo is=\"true\">/</mo><mi is=\"true\" mathvariant=\"italic\">Si</mi></math></span><span style=\"font-size: 90%; display: inline-block;\" tabindex=\"0\"></span><script type=\"math/mml\"><math><msub is=\"true\"><mrow is=\"true\"><mi mathvariant=\"italic\" is=\"true\">SnS</mi></mrow><mrow is=\"true\"><mn is=\"true\">2</mn></mrow></msub><mo is=\"true\">/</mo><mi mathvariant=\"italic\" is=\"true\">Si</mi></math></script></span> heterostructure, which reduces the charge transport time and accelerates desorption, resulting in rapid recovery. Thus, this approach presents a promising strategy to achieve superior sensing characteristics and advancements in gas sensor technologies.","PeriodicalId":425,"journal":{"name":"Sensors and Actuators B: Chemical","volume":"70 1","pages":""},"PeriodicalIF":8.0000,"publicationDate":"2024-12-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Sensors and Actuators B: Chemical","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1016/j.snb.2024.137165","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, ANALYTICAL","Score":null,"Total":0}

引用次数: 0

Abstract

The formation of heterostructure offers significant potential to improve sensor performance due to its unique interfacial properties. In this work, we report the fabrication of highly efficient

{SnS}_{2} / Si

${SnS}_{2} / Si$ heterostructure based gas sensor for room temperature detection (30 °C) of

{NO}_{2}

${NO}_{2}$ . The

{SnS}_{2} / Si

${SnS}_{2} / Si$ sensor exhibits an outstanding sensing response of 671% towards 40 ppm of

{NO}_{2}

${NO}_{2}$ , which is 4.5 times higher than that of

{SnS}_{2}

${SnS}_{2}$ . Moreover, it shows fast response and recovery time of 26 s and 51.5 s, respectively. It shows a distinct selectivity towards

{NO}_{2}

${NO}_{2}$ with excellent reproducibility and a low detection limit of 171 ppb, maintaining 93.8% of stability over 30 days. The enhanced sensing performance is attributed to the accelerated charge transfer rate and carrier mobility resulting from the formation of

{SnS}_{2} / Si

${SnS}_{2} / Si$ heterostructure, which reduces the charge transport time and accelerates desorption, resulting in rapid recovery. Thus, this approach presents a promising strategy to achieve superior sensing characteristics and advancements in gas sensor technologies.

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来源期刊

Sensors and Actuators B: Chemical 工程技术-电化学

CiteScore

14.60

自引率

11.90%

发文量

1776

审稿时长

3.2 months

期刊介绍： Sensors & Actuators, B: Chemical is an international journal focused on the research and development of chemical transducers. It covers chemical sensors and biosensors, chemical actuators, and analytical microsystems. The journal is interdisciplinary, aiming to publish original works showcasing substantial advancements beyond the current state of the art in these fields, with practical applicability to solving meaningful analytical problems. Review articles are accepted by invitation from an Editor of the journal.