V Kuzmin, D Mokhov, T Berezovskaya, A Monastyrenko, A Bouravleuv
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引用次数: 0
Abstract
The processes of electrochemical deposition of Ni on vertically aligned GaAs nanowires (NWs) grown by molecular-beam epitaxy (MBE) using Au as a growth catalyst on n-type Si(111) substrates were studied. Based on the results of electrochemical deposition, it was concluded that during the MBE synthesis of NWs the self-induced formation of conductive channels can occur inside NWs, thereby forming quasi core-shell NWs. Depending on the length of the channel compare to the NW heights and the parameters of electrochemical deposition, the different hybrid metal-semiconductor nanostructures, such as Ni nanoparticles on GaAs NW side walls, Ni clusters on top ends of GaAs NWs, core-shell GaAs/Ni NWs, were obtained.
期刊介绍：
The journal aims to publish papers at the forefront of nanoscale science and technology and especially those of an interdisciplinary nature. Here, nanotechnology is taken to include the ability to individually address, control, and modify structures, materials and devices with nanometre precision, and the synthesis of such structures into systems of micro- and macroscopic dimensions such as MEMS based devices. It encompasses the understanding of the fundamental physics, chemistry, biology and technology of nanometre-scale objects and how such objects can be used in the areas of computation, sensors, nanostructured materials and nano-biotechnology.
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