Enhanced irradiation stability of MOSFET devices realized by improving nucleus density of CrxNbMoTaW generated by lattice shrinkage

IF 10 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY Materials Today Physics Pub Date : 2025-01-01 DOI:10.1016/j.mtphys.2024.101639
Wenjing Wei , Yang Hong , Xiaolei Shi , Yang Li , Kai Cui , Tianyu Zhang , Xin Jia , Jingyang Li , Hongjun Kang , Wei Qin , Xiaohong Wu
{"title":"Enhanced irradiation stability of MOSFET devices realized by improving nucleus density of CrxNbMoTaW generated by lattice shrinkage","authors":"Wenjing Wei ,&nbsp;Yang Hong ,&nbsp;Xiaolei Shi ,&nbsp;Yang Li ,&nbsp;Kai Cui ,&nbsp;Tianyu Zhang ,&nbsp;Xin Jia ,&nbsp;Jingyang Li ,&nbsp;Hongjun Kang ,&nbsp;Wei Qin ,&nbsp;Xiaohong Wu","doi":"10.1016/j.mtphys.2024.101639","DOIUrl":null,"url":null,"abstract":"<div><div>The limited irradiation stability of metal-oxide-semiconductor field-effect transistor (MOSFET) devices has restricted their application in deep space exploration missions. Therefore, it is an urgent need to develop a new and efficient packaging hardening techniques to improve the irradiation stability of MOSFET devices. Herein, Cr<sub>0.5</sub>NbMoTaW was prepared by localized high-energy mechanical alloying and coated on the MOSFET's surface, and the packaged MOSFETs exhibit excellent irradiation stability. The threshold voltage change value of Cr<sub>0.5</sub>NbMoTaW packaged MOSFET device (0.26 V) is lower than the unpackaged MOSFET (4.15 V) after high-energy electron irradiation. Experimental and theoretical calculations show that Cr induces lattice shrinkage of Cr<sub>0.5</sub>NbMoTaW high-entropy alloys, leading to an improved density of nucleus. This increases the probability of elastic and inelastic collision between high-energy electrons and the nucleus, thus achieving excellent irradiation stability of packaged MOSFET devices. This work presents a strategy to improve the irradiation stability of MOSFET devices by using high-entropy alloy packaging.</div></div>","PeriodicalId":18253,"journal":{"name":"Materials Today Physics","volume":"50 ","pages":"Article 101639"},"PeriodicalIF":10.0000,"publicationDate":"2025-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Today Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2542529324003158","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
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Abstract

The limited irradiation stability of metal-oxide-semiconductor field-effect transistor (MOSFET) devices has restricted their application in deep space exploration missions. Therefore, it is an urgent need to develop a new and efficient packaging hardening techniques to improve the irradiation stability of MOSFET devices. Herein, Cr0.5NbMoTaW was prepared by localized high-energy mechanical alloying and coated on the MOSFET's surface, and the packaged MOSFETs exhibit excellent irradiation stability. The threshold voltage change value of Cr0.5NbMoTaW packaged MOSFET device (0.26 V) is lower than the unpackaged MOSFET (4.15 V) after high-energy electron irradiation. Experimental and theoretical calculations show that Cr induces lattice shrinkage of Cr0.5NbMoTaW high-entropy alloys, leading to an improved density of nucleus. This increases the probability of elastic and inelastic collision between high-energy electrons and the nucleus, thus achieving excellent irradiation stability of packaged MOSFET devices. This work presents a strategy to improve the irradiation stability of MOSFET devices by using high-entropy alloy packaging.

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通过提高晶格收缩产生的CrxNbMoTaW的核密度,实现了MOSFET器件辐照稳定性的增强
金属氧化物半导体场效应晶体管(MOSFET)器件辐照稳定性有限,制约了其在深空探测任务中的应用。因此,迫切需要开发一种新的、高效的封装硬化技术来提高MOSFET器件的辐照稳定性。本文采用局部高能机械合金化法制备了Cr0.5NbMoTaW,并将其包覆在MOSFET表面,封装后的MOSFET具有优异的辐照稳定性。高能电子辐照后,Cr0.5NbMoTaW封装MOSFET器件的阈值电压变化值(0.26 V)低于未封装MOSFET器件(4.15 V)。实验和理论计算表明,Cr诱导Cr0.5NbMoTaW高熵合金晶格收缩,提高了合金的核密度。这增加了高能电子与原子核之间弹性和非弹性碰撞的概率,从而实现了封装MOSFET器件优异的辐照稳定性。本文提出了一种利用高熵合金封装提高MOSFET器件辐照稳定性的方法。
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来源期刊
Materials Today Physics
Materials Today Physics Materials Science-General Materials Science
CiteScore
14.00
自引率
7.80%
发文量
284
审稿时长
15 days
期刊介绍: Materials Today Physics is a multi-disciplinary journal focused on the physics of materials, encompassing both the physical properties and materials synthesis. Operating at the interface of physics and materials science, this journal covers one of the largest and most dynamic fields within physical science. The forefront research in materials physics is driving advancements in new materials, uncovering new physics, and fostering novel applications at an unprecedented pace.
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