Experimental and simulation study for an improved efficiency of 8.46% of a CTS thin-film solar cell: impact of tin (Sn) concentration on structural, optoelectronic properties and photovoltaic performance
{"title":"Experimental and simulation study for an improved efficiency of 8.46% of a CTS thin-film solar cell: impact of tin (Sn) concentration on structural, optoelectronic properties and photovoltaic performance","authors":"Elarbi Laghchim, Abderrahim Raidou, Jamal Zimou, Amal Yousfi, Jaouad Mhalla, Abdelattif El-Habib, Atika Fahmi, Khalid Nouneh, Mustapha Rouchdi, Amine Belfhaili, M’hamed Taibi, Mounir Fahoume","doi":"10.1007/s11082-024-07951-x","DOIUrl":null,"url":null,"abstract":"<div><p>In this study, we investigated the influence of tin concentration on the physical properties of eco-friendly CTS thin-film based solar cells deposited by means of the SILAR route. The results were discussed through several characterization techniques. XRD revealed the formation of Cu<sub>2</sub>SnS<sub>3</sub> phase, along with peaks of CuS and Cu<sub>4</sub>S<sub>7</sub> secondary phases, which diminished with increasing tin concentration. Raman spectroscopy confirmed the tetragonal crystalline structure of CTS films with (112) as the preferred orientation. The direct optical bandgap energy of the synthesized CTS films increased from 1.42 to 1.56 eV as the concentration of tin rose from 0.08 to 0.12 M. Electrical Hall effect measurements performed on the grown CTS layers revealed a p-type conductivity with hall mobility in the range 0.38–2.135 cm<sup>2</sup>/Vs and a carrier concentration between 3.93 × 10<sup>21</sup> cm<sup>−3</sup> and 7.68 × 10<sup>21</sup> cm<sup>−3</sup>. Furthermore, using SCAPS-1D solar cell simulation software, the photovoltaic performance of the CTS-S1, CTS-S2 and CTS-S3 absorber layers has been evaluated. Despite the fact that the CTS-S1 absorber layer has more secondary phases and slightly lower mobility than the CTS-S2 and CTS-S3 layers, its excellent optical properties, including a high absorption coefficient (> 10<sup>4</sup> cm<sup>−1</sup>) and an optimal bandgap energy of 1.42 eV, enabled it to achieve the best efficiency of 8.46%.</p></div>","PeriodicalId":720,"journal":{"name":"Optical and Quantum Electronics","volume":"57 1","pages":""},"PeriodicalIF":3.3000,"publicationDate":"2024-12-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Optical and Quantum Electronics","FirstCategoryId":"5","ListUrlMain":"https://link.springer.com/article/10.1007/s11082-024-07951-x","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract
In this study, we investigated the influence of tin concentration on the physical properties of eco-friendly CTS thin-film based solar cells deposited by means of the SILAR route. The results were discussed through several characterization techniques. XRD revealed the formation of Cu2SnS3 phase, along with peaks of CuS and Cu4S7 secondary phases, which diminished with increasing tin concentration. Raman spectroscopy confirmed the tetragonal crystalline structure of CTS films with (112) as the preferred orientation. The direct optical bandgap energy of the synthesized CTS films increased from 1.42 to 1.56 eV as the concentration of tin rose from 0.08 to 0.12 M. Electrical Hall effect measurements performed on the grown CTS layers revealed a p-type conductivity with hall mobility in the range 0.38–2.135 cm2/Vs and a carrier concentration between 3.93 × 1021 cm−3 and 7.68 × 1021 cm−3. Furthermore, using SCAPS-1D solar cell simulation software, the photovoltaic performance of the CTS-S1, CTS-S2 and CTS-S3 absorber layers has been evaluated. Despite the fact that the CTS-S1 absorber layer has more secondary phases and slightly lower mobility than the CTS-S2 and CTS-S3 layers, its excellent optical properties, including a high absorption coefficient (> 104 cm−1) and an optimal bandgap energy of 1.42 eV, enabled it to achieve the best efficiency of 8.46%.
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Optical and Quantum Electronics provides an international forum for the publication of original research papers, tutorial reviews and letters in such fields as optical physics, optical engineering and optoelectronics. Special issues are published on topics of current interest.
Optical and Quantum Electronics is published monthly. It is concerned with the technology and physics of optical systems, components and devices, i.e., with topics such as: optical fibres; semiconductor lasers and LEDs; light detection and imaging devices; nanophotonics; photonic integration and optoelectronic integrated circuits; silicon photonics; displays; optical communications from devices to systems; materials for photonics (e.g. semiconductors, glasses, graphene); the physics and simulation of optical devices and systems; nanotechnologies in photonics (including engineered nano-structures such as photonic crystals, sub-wavelength photonic structures, metamaterials, and plasmonics); advanced quantum and optoelectronic applications (e.g. quantum computing, memory and communications, quantum sensing and quantum dots); photonic sensors and bio-sensors; Terahertz phenomena; non-linear optics and ultrafast phenomena; green photonics.
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