Modeling and Emulation of Extended Memristors: Two-Port Approach Revisited

IF 4 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Circuits and Systems II: Express Briefs Pub Date : 2024-10-01 DOI:10.1109/TCSII.2024.3471689
Dalibor Biolek;Zdeněk Biolek;Zdeněk Kolka;Viera Biolková;Zdeněk Kohl
{"title":"Modeling and Emulation of Extended Memristors: Two-Port Approach Revisited","authors":"Dalibor Biolek;Zdeněk Biolek;Zdeněk Kolka;Viera Biolková;Zdeněk Kohl","doi":"10.1109/TCSII.2024.3471689","DOIUrl":null,"url":null,"abstract":"There have been many attempts to emulate extended memristors as models of real-world devices using Graetz diode bridges with capacitive loads and similar techniques. In this brief, these systems are studied comprehensively as special cases of nonlinear resistive two-ports with reactance loads. The conditions that must be satisfied in order to transform a load into a generic memristor are formulated. It is shown that some hitherto published circuits may not automatically satisfy these conditions, so that in general they may not be extended memristors. The relevant circuit theorems are verified by laboratory experiments.","PeriodicalId":13101,"journal":{"name":"IEEE Transactions on Circuits and Systems II: Express Briefs","volume":"72 1","pages":"298-302"},"PeriodicalIF":4.0000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Circuits and Systems II: Express Briefs","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10701010/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
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Abstract

There have been many attempts to emulate extended memristors as models of real-world devices using Graetz diode bridges with capacitive loads and similar techniques. In this brief, these systems are studied comprehensively as special cases of nonlinear resistive two-ports with reactance loads. The conditions that must be satisfied in order to transform a load into a generic memristor are formulated. It is shown that some hitherto published circuits may not automatically satisfy these conditions, so that in general they may not be extended memristors. The relevant circuit theorems are verified by laboratory experiments.
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扩展忆阻器的建模与仿真:再访双端口方法
已经有许多尝试模拟扩展忆阻器作为模型的现实世界的设备使用格莱茨二极管桥与电容负载和类似的技术。在本文中,这些系统作为具有电抗负载的非线性电阻双端口的特殊情况进行了全面的研究。提出了将负载转换为通用忆阻器必须满足的条件。结果表明,一些迄今为止公布的电路可能不能自动满足这些条件,因此一般来说,它们可能不是扩展忆阻器。通过实验验证了相关的电路定理。
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来源期刊
IEEE Transactions on Circuits and Systems II: Express Briefs
IEEE Transactions on Circuits and Systems II: Express Briefs 工程技术-工程:电子与电气
CiteScore
7.90
自引率
20.50%
发文量
883
审稿时长
3.0 months
期刊介绍: TCAS II publishes brief papers in the field specified by the theory, analysis, design, and practical implementations of circuits, and the application of circuit techniques to systems and to signal processing. Included is the whole spectrum from basic scientific theory to industrial applications. The field of interest covered includes: Circuits: Analog, Digital and Mixed Signal Circuits and Systems Nonlinear Circuits and Systems, Integrated Sensors, MEMS and Systems on Chip, Nanoscale Circuits and Systems, Optoelectronic Circuits and Systems, Power Electronics and Systems Software for Analog-and-Logic Circuits and Systems Control aspects of Circuits and Systems.
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Table of Contents IEEE Transactions on Circuits and Systems--II: Express Briefs Publication Information IEEE Circuits and Systems Society Information A 400-Mbps 1.05 pJ/Bit IR-UWB Transmitter for High-Density Neural Recording Systems Table of Contents
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