Demonstration of a Four-Beam Integrated Travelling Wave Tube in W-Band

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-11-11 DOI:10.1109/LED.2024.3495678
Huanli Ji;Jinsheng Yang;Ran Sun;Hanshuo Mu;Jun Cai;Pan Pan;Jinjun Feng
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Abstract

This letter presents an investigation into a W-band four-beam planar-integrated traveling wave tube (TWT). Building on the design concept of the planar integrated TWT, this research focuses on the high-efficiency circuit that utilizes a bending FWG, verified through the fabrication of a tube employing a conventional PPM system. Further research on the four-beam TWT utilizing the proposed planar integrated periodic permanent magnet (PIPPM) led to its development, assembly, and testing. Experiment results achieved over 85% transmission efficiency through a 120 mm long tunnel, validating this beam optical system configuration. The device attained a maximum saturated output power of 10 W and a saturated gain of 23 dB, with a bandwidth of 6 GHz per channel at an operating voltage of 12.6 kV. The four-beam TWT demonstrates consistent electrical performance and offers a novel solution for short-wavelength millimeter-wave TWT active phased arrays applications.
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w波段四束集成行波管的论证
本文介绍了一种w波段四波束平面积分行波管(TWT)。基于平面集成行波管的设计理念,本研究着重于利用弯曲FWG的高效电路,并通过使用传统PPM系统制造管来验证。利用所提出的平面集成周期性永磁体(PIPPM)对四波束行波管进行了进一步的研究,导致了其开发,组装和测试。实验结果表明,通过120 mm长的隧道,传输效率超过85%,验证了该光束光学系统的配置。该器件在12.6 kV工作电压下,最大饱和输出功率为10 W,饱和增益为23 dB,每通道带宽为6 GHz。四波束行波管具有一致的电性能,为短波毫米波行波管有源相控阵应用提供了一种新颖的解决方案。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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