Unveiling the Role of Local Stress in Enhancing Ferroelectric Properties and Endurance of HfO₂/ZrO₂ Superlattice Structures

IF 4.1 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Electron Device Letters Pub Date : 2024-11-12 DOI:10.1109/LED.2024.3496720
Boyao Cui;Sheng Ye;Xuepei Wang;Maokun Wu;Yuchun Li;Yishan Wu;Yichen Wen;Jinhao Liu;Xiaoxi Li;Pengpeng Ren;Zhigang Ji;Hongliang Lu;David Wei Zhang;Runsheng Wang;Ru Huang
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Abstract

Ferroelectric superlattices (SL) composed of HfO2 and ZrO2 have garnered significant interest due to their outstanding performance. In this letter, we revealed that the SL structure facilitates ferroelectric excitation by introducing local stress compared to solid solution (SS) HZO. This additional stress results in an earlier saturation of polarization during annealing process and thus less annealing time is needed for SL. The thermal defects (e.g. oxygen vacancy) are effectively mitigated, leading to a remarkable improvement in endurance simultaneously. The precise modulation of local stress achieved through stack engineering unlocks vast potential for ferroelectric devices, enabling them to exhibit superior ferroelectricity and unprecedented reliability.
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揭示局部应力在提高HfO₂/ZrO₂超晶格结构铁电性能和耐久性中的作用
由HfO2和ZrO2组成的铁电超晶格(SL)由于其优异的性能而引起了人们的广泛关注。在这封信中,我们发现与固溶体(SS) HZO相比,SL结构通过引入局部应力来促进铁电激发。这种额外的应力导致在退火过程中更早的极化饱和,从而减少了SL所需的退火时间。有效地减轻了热缺陷(例如氧空位),同时显著提高了耐久性。通过堆叠工程实现的局部应力的精确调制为铁电器件释放了巨大的潜力,使它们能够表现出卓越的铁电性和前所未有的可靠性。
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来源期刊
IEEE Electron Device Letters
IEEE Electron Device Letters 工程技术-工程:电子与电气
CiteScore
8.20
自引率
10.20%
发文量
551
审稿时长
1.4 months
期刊介绍: IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.
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Front Cover Table of Contents IEEE Transactions on Electron Devices Table of Contents IEEE Electron Device Letters Information for Authors EDS Meetings Calendar
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