Dual Ferroelectric Polarization and Dielectric Response Improvement in Epitaxial Hf0.5Zr0.5O2/HfO2 Nanolaminates

IF 8.2 2区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY ACS Applied Materials & Interfaces Pub Date : 2025-01-01 DOI:10.1021/acsami.4c15867
Mehrdad Ghiasabadi Farahani, Alberto Quintana, Tingfeng Song, Rohit Kumar, Andrea Rubano, Faizan Ali, Florencio Sánchez, Ignasi Fina
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Abstract

Nanolaminates based on ferroelectric polycrystalline doped HfO2 have gained interest because those compounds show enhanced functional properties. Here, we achieve coexisting improvement of remanent polarization and dielectric permittivity in wake-up-free epitaxial Hf0.5Zr0.5O2/HfO2 nanolaminates with different numbers of HfO2 nanolayers if compared with Hf0.5Zr0.5O2 single films of equivalent thickness or other reported polycrystalline nanolaminates. Comprehensive structural characterization reveals that the origin of the enhancement must be the larger amount of the orthorhombic phase in the nanolaminates. The retention of nanolaminates is greater than that of Hf0.5Zr0.5O2 single films; however, fatigue is larger and ferroelectric switching is slower in the nanolaminates compared with single layers. The present work reveals nanolamination in high-quality films as a strategy to increase dielectric permittivity without important degradation of other functional properties.

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外延型Hf0.5Zr0.5O2/HfO2纳米复合材料的双铁电极化和介电响应改善
基于铁电多晶掺杂HfO2的纳米层合材料因其具有增强的功能特性而受到关注。与同等厚度的Hf0.5Zr0.5O2单层膜或其他已报道的多晶纳米层材料相比,我们实现了不同HfO2纳米层数的无唤醒外延Hf0.5Zr0.5O2/HfO2纳米层材料的剩余极化和介电常数的共存改善。综合结构表征表明,增强的原因一定是纳米层合材料中大量的正交相。纳米层合物的保留率大于Hf0.5Zr0.5O2单膜;然而,与单层相比,纳米层合材料的疲劳更大,铁电开关更慢。目前的工作表明,在高质量的薄膜中,纳米层化是一种增加介电常数而不影响其他功能特性的策略。
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来源期刊
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces 工程技术-材料科学:综合
CiteScore
16.00
自引率
6.30%
发文量
4978
审稿时长
1.8 months
期刊介绍: ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.
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