Influence of Buffer/Protective Layers on the Structural and Magnetic Properties of SmCo Films on Silicon

IF 2.1 3区 工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Magnetics Pub Date : 2024-11-08 DOI:10.1109/TMAG.2024.3494027
F. Maspero;O. Koplak;A. Plaza;B. Heinz;F. Kohl;P. Pirro;R. Bertacco
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Abstract

Integration of samarium-cobalt hard magnets on silicon requires buffer/protective layers that can enhance the magnetic properties of the magnet while preserving its structure and chemical composition after post-annealing treatments needed for the formation of the magnetically hard phase. In this work, a comparison of samarium-cobalt films for five different buffer/protective layers, namely, Ti, W, TiW, Ta, and Cr, and two different annealing temperatures, 650 °C and 750 °C, is presented. Depending on materials and annealing temperatures, magnetic properties such as saturation and coercivity of the SmCo film can be finely tuned. We show that coercivity up to 3.65 T or saturation magnetization up to 0.95 T can be reached by proper choice of the relevant process parameters: deposition temperature, material for the buffer/protective layer, and annealing temperature. Such value of coercivity is among the highest found in the literature for thin films of SmCo.
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缓冲/保护层对硅表面SmCo薄膜结构和磁性能的影响
在硅上集成钐钴硬磁体需要缓冲/保护层,这可以增强磁体的磁性,同时在形成磁硬相所需的后退火处理后保留其结构和化学成分。在这项工作中,比较了五种不同的缓冲/保护层,即Ti, W, TiW, Ta和Cr,以及650°C和750°C两种不同的退火温度下的钐钴膜。根据材料和退火温度的不同,SmCo薄膜的磁性能(如饱和和矫顽力)可以很好地调节。我们发现,通过适当选择相关的工艺参数:沉积温度、缓冲/保护层材料和退火温度,可以达到高达3.65 T的矫顽力或高达0.95 T的饱和磁化。这样的矫顽力值是文献中发现的SmCo薄膜中最高的。
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来源期刊
IEEE Transactions on Magnetics
IEEE Transactions on Magnetics 工程技术-工程:电子与电气
CiteScore
4.00
自引率
14.30%
发文量
565
审稿时长
4.1 months
期刊介绍: Science and technology related to the basic physics and engineering of magnetism, magnetic materials, applied magnetics, magnetic devices, and magnetic data storage. The IEEE Transactions on Magnetics publishes scholarly articles of archival value as well as tutorial expositions and critical reviews of classical subjects and topics of current interest.
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