{"title":"Source Material Design for Realizing >50% Indium-Saving Transparent Electrode toward Sustainable Development of Silicon Heterojunction Solar Cells","authors":"Zhongyu Gao, Can Han, Jiejun Pan, Jiajun Shen, Zhibin Liu, Kaixuan Chen, Zhikai Yi, Yong Zhang, Zhong Yu, Xianjie Zhou, Pingqi Gao","doi":"10.1021/acsami.4c15684","DOIUrl":null,"url":null,"abstract":"Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring <i>In-free</i> TCOs. However, no promising industrial solution has been obtained yet. In our work, we adopt the emerging reactive plasma deposition (RPD) approach and provide our <i>In-reduced</i> solution by directly reducing the In content from the source material. We designed the indium zinc oxide (IZO) target with a composition of Zn<sub>3</sub>In<sub>2</sub>O<sub>6</sub> (i.e., (ZnO)<sub>3</sub>·In<sub>2</sub>O<sub>3</sub>). Density functional theory (DFT) calculation shows that the introduction of a large amount of ZnO significantly perturbs the conduction band of the In<sub>2</sub>O<sub>3</sub> host, resulting in a limitation of exploring high-mobility IZO films. For TCOs used in solar cell application, low resistivity with high carrier mobility is required. Via RPD process optimization, we obtained the minimal resistivity value of 6.08 × 10<sup>–4</sup> Ω·cm, which is comparable to our lab-standard tin-doped indium oxide (ITO) film. The corresponding electron mobility and carrier concentration are 31 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup> and 3.37 × 10<sup>20</sup> cm<sup>–3</sup>, respectively. Our IZO film is in an amorphous state. The optical band gap is ∼3.6 eV. X-ray photoelectron spectroscopy (XPS) data show that the film composition is In:Zn:O = 21.60:28.75:49.65 (at. %). Damp heat tests show strong stability of our IZO film, and no aging effects have been observed. Furthermore, we demonstrated wafer-scale silicon heterojunction (SHJ) solar cells with IZO films. As compared with our reference hydrogenated cerium-doped indium oxide (ICO)-based solar cells, the IZO-based devices show even higher fill factor parameters. Our amorphous state stable <i>In-reduced</i> IZO film could find versatile application in the sustainable development of temperature-sensitive devices such as SHJ and perovskite/silicon tandem solar cells, as well as flexible OLEDs.","PeriodicalId":5,"journal":{"name":"ACS Applied Materials & Interfaces","volume":"1 1","pages":""},"PeriodicalIF":8.3000,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACS Applied Materials & Interfaces","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1021/acsami.4c15684","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Indium (In) reduction is a hot topic in transparent conductive oxide (TCO) research. So far, most strategies have been focused on reducing the layer thickness of In-based TCO films and exploring In-free TCOs. However, no promising industrial solution has been obtained yet. In our work, we adopt the emerging reactive plasma deposition (RPD) approach and provide our In-reduced solution by directly reducing the In content from the source material. We designed the indium zinc oxide (IZO) target with a composition of Zn3In2O6 (i.e., (ZnO)3·In2O3). Density functional theory (DFT) calculation shows that the introduction of a large amount of ZnO significantly perturbs the conduction band of the In2O3 host, resulting in a limitation of exploring high-mobility IZO films. For TCOs used in solar cell application, low resistivity with high carrier mobility is required. Via RPD process optimization, we obtained the minimal resistivity value of 6.08 × 10–4 Ω·cm, which is comparable to our lab-standard tin-doped indium oxide (ITO) film. The corresponding electron mobility and carrier concentration are 31 cm2 V–1 s–1 and 3.37 × 1020 cm–3, respectively. Our IZO film is in an amorphous state. The optical band gap is ∼3.6 eV. X-ray photoelectron spectroscopy (XPS) data show that the film composition is In:Zn:O = 21.60:28.75:49.65 (at. %). Damp heat tests show strong stability of our IZO film, and no aging effects have been observed. Furthermore, we demonstrated wafer-scale silicon heterojunction (SHJ) solar cells with IZO films. As compared with our reference hydrogenated cerium-doped indium oxide (ICO)-based solar cells, the IZO-based devices show even higher fill factor parameters. Our amorphous state stable In-reduced IZO film could find versatile application in the sustainable development of temperature-sensitive devices such as SHJ and perovskite/silicon tandem solar cells, as well as flexible OLEDs.
期刊介绍:
ACS Applied Materials & Interfaces is a leading interdisciplinary journal that brings together chemists, engineers, physicists, and biologists to explore the development and utilization of newly-discovered materials and interfacial processes for specific applications. Our journal has experienced remarkable growth since its establishment in 2009, both in terms of the number of articles published and the impact of the research showcased. We are proud to foster a truly global community, with the majority of published articles originating from outside the United States, reflecting the rapid growth of applied research worldwide.