Application of Electron Beam Modulated Emission in a Novel Low Magnetic Field, High-Efficiency Q-Band Transit-Time Oscillator

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-14 DOI:10.1109/TED.2024.3492146
Zulong Chen;Lei Wang;Junpu Ling;Lili Song;Juntao He;Jiawen Li
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Abstract

A novel method to realize modulated emission and transmission in the diode region is proposed to improve beam-wave interaction for high output power and conversion efficiency. Microwave energy leaked into the diode is utilized to form a modulated electromagnetic field to modulate the emission and transmission of the electron beam. This mechanism is conducive to achieving better modulation effects of electron beam and suppressing competitive modes through the resonant frequency component of initial current modulation. A low magnetic field (0.7 T) Q-band relativistic coaxial transit time oscillator (RCTTO) is designed with this mechanism to obtain a microwave power of 337 MW, under the diode voltage of 396 kV and current of 1.98 kA. Compared with an RCTTO with a normal emission mechanism, the conversion efficiency increases from 21.3% to 43%.
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电子束调制发射在新型低磁场、高效率q波段跃迁时间振荡器中的应用
为了提高输出功率和转换效率,提出了一种在二极管区域实现调制发射和传输的新方法。利用泄漏到二极管中的微波能量形成调制电磁场来调制电子束的发射和传输。该机制有利于通过初始电流调制的谐振频率分量获得更好的电子束调制效果和抑制竞争模式。利用该机构设计了一个低磁场(0.7 T) q波段相对论性同轴传输时间振荡器(RCTTO),在二极管电压为396 kV、电流为1.98 kA的条件下获得了337 MW的微波功率。与普通发射机制的RCTTO相比,转换效率从21.3%提高到43%。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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