{"title":"Enhancement of the Gain and Stability in a Discrete Dynode Electron Multiplier Through Differential Voltage Distribution Among Dynodes","authors":"Jishi Yang;Jie Li;Wanru Zhao;Li He;Ruozheng Wang;Yuan Zhao;Wenbo Hu;Jinshou Tian;Shengli Wu","doi":"10.1109/TED.2024.3503536","DOIUrl":null,"url":null,"abstract":"We proposed an effective strategy involving a differential distribution of voltages among dynodes to significantly enhance the gain and stability of discrete dynode electron multipliers (DEMs) under continuous electron bombardment. The effects of the differential voltage distribution on the DEM performance were systematically investigated through experiments and numerical simulations. The differential voltage distribution of 7:7:7:7:7:5:5:5:5 enables the DEM to achieve a gain of \n<inline-formula> <tex-math>$3.4\\times 10^{{4}}$ </tex-math></inline-formula>\n, representing a substantial increase by 2.1 times at an operating voltage of 1200 V, and the operating voltage at a gain of 106 to be reduced to 1949 V with a decrease of 186 V in comparison to the traditional uniform voltage distribution of 1:1:1:1:1:1:1:1:1. The gain enhancement is closely related to the increased average secondary electron emission (SEE) coefficients of dynodes D2-D6 and the improved electron collection efficiencies of dynodes D3 and D6. Additionally, the differential voltage also reduced the gain decay rate to 16.7%/mC, reflecting a decrease of 14.8% due to the suppression of SEE degradations in dynodes D7-D9, which can be attributed to their lower average SEE coefficients. Overall, the proposed strategy of differential voltage distribution, characterized by higher voltages among earlier dynodes and lower voltages among latter dynodes, presents a novel and universal approach for optimizing the structure of electron multipliers, addressing the need for highly sensitive and reliable detection of ultraweak or even single charged particles.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"439-444"},"PeriodicalIF":2.9000,"publicationDate":"2024-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10776757/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
We proposed an effective strategy involving a differential distribution of voltages among dynodes to significantly enhance the gain and stability of discrete dynode electron multipliers (DEMs) under continuous electron bombardment. The effects of the differential voltage distribution on the DEM performance were systematically investigated through experiments and numerical simulations. The differential voltage distribution of 7:7:7:7:7:5:5:5:5 enables the DEM to achieve a gain of
$3.4\times 10^{{4}}$
, representing a substantial increase by 2.1 times at an operating voltage of 1200 V, and the operating voltage at a gain of 106 to be reduced to 1949 V with a decrease of 186 V in comparison to the traditional uniform voltage distribution of 1:1:1:1:1:1:1:1:1. The gain enhancement is closely related to the increased average secondary electron emission (SEE) coefficients of dynodes D2-D6 and the improved electron collection efficiencies of dynodes D3 and D6. Additionally, the differential voltage also reduced the gain decay rate to 16.7%/mC, reflecting a decrease of 14.8% due to the suppression of SEE degradations in dynodes D7-D9, which can be attributed to their lower average SEE coefficients. Overall, the proposed strategy of differential voltage distribution, characterized by higher voltages among earlier dynodes and lower voltages among latter dynodes, presents a novel and universal approach for optimizing the structure of electron multipliers, addressing the need for highly sensitive and reliable detection of ultraweak or even single charged particles.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.