Study on a High-Power W -Band Extended Interaction Klystron With Efficiency Toward 44%

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-22 DOI:10.1109/TED.2024.3499943
Z. Zhang;J. C. Cai;P. C. Yin;Z. X. Su;X. K. Zhang;C. Zhang;L. Zeng;J. Xu;L. N. Yue;H. R. Yin;Y. Xu;G. Q. Zhao;W. X. Wang;Y. Y. Wei
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Abstract

In order to overcome the low efficiency (usually less than 25%) of millimeter-wave and terahertz (MMW/THz) klystrons, an exploratory study is conducted to improve the efficiency in the design of W-band extended interaction klystrons (EIKs). In this article, fast large-signal simulations using KlyC code are comprehensively used for the first time to accurately conduct full-scale parameterization of EIK, it is found that the upper limit of terahertz klystron efficiency is no longer solely dominated via the beam perveance, but rather restricted by various factors, including effective impedance, ohmic loss, cavity arrangement, and so on. The physical mechanism involved is so complex that the preliminary parametric sortation is mandatory to achieve very high efficiency (HE). Particle-in-cell (PIC) simulation results verified our theoretical evaluations, demonstrating that the W-band EIK proposed and optimized in this article could deliver up to 44.5% electronic efficiency and 39.2% RF efficiency around 100 GHz, with operating beam voltage of 50 kV and beam current of 2 A. The output power and saturation gain could achieve 39.2 kW and 65.5 dB, respectively, in which no instability is observed. In addition, a novel beam optics system (BOS) based on hybrid permanent magnets is proposed. Such compact BOS is exclusively developed to deal with the challenge induced by severe radial beam expansion in this EIK, which is the side-effect of the high intensity of beam-wave interactions. This study on high-power (HP) HE compact W-band EIK reveals the true potential of such types of devices in the MMW/THz regime.
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效率接近44%的大功率W波段扩展相互作用速调管的研究
为了克服毫米波和太赫兹(MMW/THz)速调管效率低(通常低于25%)的问题,对提高w波段扩展相互作用速调管(EIKs)的设计效率进行了探索性研究。本文首次全面利用KlyC代码进行快速大信号模拟,准确地对EIK进行了全尺寸参数化,发现太赫兹速调管效率的上限不再仅仅由波束性能决定,而是受到多种因素的制约,包括有效阻抗、欧姆损耗、腔体布置等。所涉及的物理机制非常复杂,为了实现非常高的效率(HE),必须进行初步的参数分选。粒子池(PIC)仿真结果验证了我们的理论评估,表明本文提出和优化的w波段EIK在100 GHz左右可以提供高达44.5%的电子效率和39.2%的射频效率,工作波束电压为50 kV,波束电流为2 A。输出功率和饱和增益分别达到39.2 kW和65.5 dB,无不稳定性。此外,提出了一种基于混合永磁体的新型光束光学系统(BOS)。这种紧凑的BOS是专门为处理EIK中严重的径向光束膨胀引起的挑战而开发的,这是高强度波束相互作用的副作用。这项关于高功率(HP) HE紧凑型w波段EIK的研究揭示了这类器件在毫米波/太赫兹波段的真正潜力。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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