Investigating the Role of Reduced Graphene Oxide on the Structural and Transport Properties of LaMnO3

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IEEE Transactions on Electron Devices Pub Date : 2024-11-25 DOI:10.1109/TED.2024.3496654
Karuna Kumari;Subhasmita Kar;Saurav Kumar;Soumya Jyoti Ray
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Abstract

The present work highlights the effect of reduced graphene oxide (rGO) on structural and charge transport properties of ( ${1} {-} {x}$ ) lanthanum manganite (LaMnO3). (x) rGO nanocomposites. The presence of dual phases within the nanocomposite specimens was well-established through comprehensive analysis employing characterization techniques, such as X-ray diffraction (XRD), Raman spectroscopy, and field-effect scanning electron microscopy (FESEM) etc. Furthermore, two distinct lattice spacings were identified by high-resolution transmission electron microscopy (HRTEM) measurements. Notably, the current versus voltage (I–V) profiles of the nanocomposites unveiled a distinctive bipolar resistive switching (RS) behavior. It was found that the increased concentration of rGO instigated an oxygen-deficient region, a phenomenon conclusively corroborated through X-ray photoelectron spectroscopy (XPS) analysis. Consequently, oxygen vacancies and ions alter the RS behavior of LaMnO3. Remarkably, the sample with ${x} =0.001$ exhibited superior RS characteristics when compared to ${x} =0.002$ and 0.005 samples. The conduction mechanism was found to be primarily governed by Ohmic and Schottky emission phenomena. The experimentally observed effect of rGO on RS property was also corroborated through first-principles-based calculations to offer a good degree of agreement. An increase in rGO concentration (x) reduces the bandgap, which brings about a semiconductor-to-metallic transition in the host material.
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还原氧化石墨烯对LaMnO3结构和输运性能影响的研究
本文重点研究了还原氧化石墨烯(rGO)对(${1}{-}{x}$)锰酸镧(LaMnO3)结构和电荷输运性质的影响。(x)氧化石墨烯纳米复合材料。通过x射线衍射(XRD)、拉曼光谱(Raman spectroscopy)、场效应扫描电镜(FESEM)等表征技术的综合分析,确定了纳米复合材料样品中存在双相。此外,通过高分辨率透射电子显微镜(HRTEM)测量确定了两个不同的晶格间距。值得注意的是,纳米复合材料的电流与电压(I-V)曲线揭示了独特的双极电阻开关(RS)行为。通过x射线光电子能谱(XPS)分析发现,rGO浓度的增加引发了一个缺氧区。因此,氧空位和离子改变了LaMnO3的RS行为。值得注意的是,与${x} =0.002$和${x} = 0.005 $相比,${x} =0.001$的样本表现出更好的RS特征。发现导电机制主要受欧姆和肖特基发射现象支配。通过基于第一性原理的计算也证实了实验观察到的rGO对RS性能的影响,提供了很好的一致性。还原氧化石墨烯浓度(x)的增加减小了带隙,从而使主体材料从半导体转变为金属。
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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