Karuna Kumari;Subhasmita Kar;Saurav Kumar;Soumya Jyoti Ray
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引用次数: 0
Abstract
The present work highlights the effect of reduced graphene oxide (rGO) on structural and charge transport properties of (
${1} {-} {x}$
) lanthanum manganite (LaMnO3). (x) rGO nanocomposites. The presence of dual phases within the nanocomposite specimens was well-established through comprehensive analysis employing characterization techniques, such as X-ray diffraction (XRD), Raman spectroscopy, and field-effect scanning electron microscopy (FESEM) etc. Furthermore, two distinct lattice spacings were identified by high-resolution transmission electron microscopy (HRTEM) measurements. Notably, the current versus voltage (I–V) profiles of the nanocomposites unveiled a distinctive bipolar resistive switching (RS) behavior. It was found that the increased concentration of rGO instigated an oxygen-deficient region, a phenomenon conclusively corroborated through X-ray photoelectron spectroscopy (XPS) analysis. Consequently, oxygen vacancies and ions alter the RS behavior of LaMnO3. Remarkably, the sample with
${x} =0.001$
exhibited superior RS characteristics when compared to
${x} =0.002$
and 0.005 samples. The conduction mechanism was found to be primarily governed by Ohmic and Schottky emission phenomena. The experimentally observed effect of rGO on RS property was also corroborated through first-principles-based calculations to offer a good degree of agreement. An increase in rGO concentration (x) reduces the bandgap, which brings about a semiconductor-to-metallic transition in the host material.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.