{"title":"Improvement of Switching Performance of RRAM Through Protruding Top Electrode and Utilizing Surface Roughness: Multiphysics Simulations","authors":"Jeonghwan Jang;Mincheol Shin","doi":"10.1109/TED.2024.3506498","DOIUrl":null,"url":null,"abstract":"In this work, we explore the viability of employing protruding top electrodes (PEs) and utilizing surface roughness (SR) for enhancing switching performance in resistive random access memory (RRAM) devices by conducting comprehensive multiphysics simulations. We demonstrate the successful enhancement of the on/off ratio and a reduction in the reset time through the application of PE. Furthermore, we validate the potential for strategically utilizing SR as an approach for performance improvement of RRAM devices. The results presented in this study could be utilized as a guideline for optimizing RRAM switching characteristics.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"72 1","pages":"253-258"},"PeriodicalIF":2.9000,"publicationDate":"2024-12-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10805755/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
Abstract
In this work, we explore the viability of employing protruding top electrodes (PEs) and utilizing surface roughness (SR) for enhancing switching performance in resistive random access memory (RRAM) devices by conducting comprehensive multiphysics simulations. We demonstrate the successful enhancement of the on/off ratio and a reduction in the reset time through the application of PE. Furthermore, we validate the potential for strategically utilizing SR as an approach for performance improvement of RRAM devices. The results presented in this study could be utilized as a guideline for optimizing RRAM switching characteristics.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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