Yefan Zhang;Shihao Yu;Peng Yang;Xiaopeng Luo;Hui Xu;Xi Wang;Haijun Liu;Sen Liu;Qingjiang Li
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引用次数: 0
Abstract
In this article, we have designed an optimized ferroelectric tunnel junction (FTJ) device structure that inserts 3-nm Al2O3 between Hf0.5Zr0.5O2 (HZO) films. The Al2O3 interlayer can block the longitudinal growth of HZO grains and increase the number of ferroelectric domains. Therefore, the FTJ devices with Al2O3 interlayer demonstrate amazing multilevel states (256) and ultralow computational power consumption (76.1 pW/bit). In addition, the proposed FTJ device shows high linearity (
$\alpha _{\text {p}} = -1.262$
), wide modulation capability, and good reproducibility. The results indicate that the device has high potential in energy-efficient brain-like computing application.
期刊介绍：
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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